Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates

Kyungwhan Yang, Kiyeol Kwak, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.

Original languageEnglish
Pages (from-to)217-221
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number2
DOIs
Publication statusPublished - 2014 Feb 1

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avalanches
photometers
nanowires
plastics
charge carriers
breakdown
wavelengths

Keywords

  • Avalanche gain
  • Avalanche photodetectors (APDs)
  • Intrinsic region
  • Nanowires (NWs)

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates. / Yang, Kyungwhan; Kwak, Kiyeol; Kim, Sangsig.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 2, 01.02.2014, p. 217-221.

Research output: Contribution to journalArticle

@article{39bd3bb96cda418d965279bd6584cb5b,
title = "Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates",
abstract = "In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.",
keywords = "Avalanche gain, Avalanche photodetectors (APDs), Intrinsic region, Nanowires (NWs)",
author = "Kyungwhan Yang and Kiyeol Kwak and Sangsig Kim",
year = "2014",
month = "2",
day = "1",
doi = "10.1002/pssc.201300388",
language = "English",
volume = "11",
pages = "217--221",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates

AU - Yang, Kyungwhan

AU - Kwak, Kiyeol

AU - Kim, Sangsig

PY - 2014/2/1

Y1 - 2014/2/1

N2 - In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.

AB - In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.

KW - Avalanche gain

KW - Avalanche photodetectors (APDs)

KW - Intrinsic region

KW - Nanowires (NWs)

UR - http://www.scopus.com/inward/record.url?scp=84894494279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894494279&partnerID=8YFLogxK

U2 - 10.1002/pssc.201300388

DO - 10.1002/pssc.201300388

M3 - Article

VL - 11

SP - 217

EP - 221

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 2

ER -