Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates

Kyungwhan Yang; Kiyeol Kwak; Sangsig Kim

doi:10.1002/pssc.201300388

Influence of the intrinsic length on p⁺-i-n⁺ Si nanowire avalanche photodetectors on flexible plastic substrates

Kyungwhan Yang, Kiyeol Kwak, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p⁺-type/intrinsic/n⁺-type (p⁺-i -n⁺) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×10⁴ and 1.4×10^-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.

Original language	English
Pages (from-to)	217-221
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	2
DOIs	https://doi.org/10.1002/pssc.201300388
Publication status	Published - 2014 Feb 1

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Keywords

Avalanche gain
Avalanche photodetectors (APDs)
Intrinsic region
Nanowires (NWs)

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Yang, K., Kwak, K., & Kim, S. (2014). Influence of the intrinsic length on p⁺-i-n⁺ Si nanowire avalanche photodetectors on flexible plastic substrates. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(2), 217-221. https://doi.org/10.1002/pssc.201300388

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Access to Document

10.1002/pssc.201300388