Abstract
In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 217-221 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 11 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2014 Feb 1 |
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Keywords
- Avalanche gain
- Avalanche photodetectors (APDs)
- Intrinsic region
- Nanowires (NWs)
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates. / Yang, Kyungwhan; Kwak, Kiyeol; Kim, Sangsig.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 2, 01.02.2014, p. 217-221.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates
AU - Yang, Kyungwhan
AU - Kwak, Kiyeol
AU - Kim, Sangsig
PY - 2014/2/1
Y1 - 2014/2/1
N2 - In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.
AB - In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.
KW - Avalanche gain
KW - Avalanche photodetectors (APDs)
KW - Intrinsic region
KW - Nanowires (NWs)
UR - http://www.scopus.com/inward/record.url?scp=84894494279&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894494279&partnerID=8YFLogxK
U2 - 10.1002/pssc.201300388
DO - 10.1002/pssc.201300388
M3 - Article
VL - 11
SP - 217
EP - 221
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 2
ER -