Influence of the intrinsic length on p+-i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates

Kyungwhan Yang, Kiyeol Kwak, Sangsig Kim

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3 Citations (Scopus)

Abstract

In this paper, we report the construction of avalanche photodetectors (APDs) consisting of p+-type/intrinsic/n+-type (p+-i -n+) Si nanowires (NWs) on a flexible plastic substrate and investigate the photomultiplication characteristics of the APDs with different intrinsic lengths. The maximum avalanche gain and responsivity of the APDs excited by the 633 nm wavelength light are estimated to be 5.9×104 and 1.4×10-3 A/W, respectively, for an intrinsic length of 0.5 μm. The maximum avalanche gain is associated with an improvement of the photomultiplication properties and results in the efficient generation of photogenerated charge carriers in the intrinsic region of the Si NWs. Furthermore, the breakdown phenomena in our APDs in the flat and upwardly bent states are investigated.

Original languageEnglish
Pages (from-to)217-221
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number2
DOIs
Publication statusPublished - 2014 Feb 1

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Keywords

  • Avalanche gain
  • Avalanche photodetectors (APDs)
  • Intrinsic region
  • Nanowires (NWs)

ASJC Scopus subject areas

  • Condensed Matter Physics

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