Influence of the local environment on Zn acceptors in the GaAs(110) surface

Donghun Lee, N. M. Santagata, J. A. Gupta

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Individual Zn acceptors in the GaAs (110) surface layer are studied with a scanning tunneling microscope. Tunneling spectroscopy reveals a peak associated with a Zn acceptor state, whose linewidth and response to local band bending depend on proximity to neighboring subsurface Zn acceptors. Though identical in topographic images, surface-layer Zn with nearby subsurface neighbors exhibits a broad peak that is insensitive to band bending, while more isolated surface-layer Zn exhibit a narrow peak which is sensitive to band bending. These results are suggestive of a shallow-to-deep acceptor transition, driven by the random dopant distribution.

Original languageEnglish
Article number053124
JournalApplied Physics Letters
Volume99
Issue number5
DOIs
Publication statusPublished - 2011 Aug 1
Externally publishedYes

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surface layers
statistical distributions
proximity
microscopes
scanning
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Influence of the local environment on Zn acceptors in the GaAs(110) surface. / Lee, Donghun; Santagata, N. M.; Gupta, J. A.

In: Applied Physics Letters, Vol. 99, No. 5, 053124, 01.08.2011.

Research output: Contribution to journalArticle

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