Influence of thermal damage and the interruption time on the optical properties of InGaN quantum well structures

Y. H. Cho, C. W. Son, J. Y. Kim, B. M. Kim, W. S. Lee, S. N. Lee, J. K. Son, O. H. Nam, Y. J. Park

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7 Citations (Scopus)

Abstract

The influence of thermal degradation and the interruption time on the optical characteristics of InGaN multi-quantum-well (MQW) structures was examined. A series of 5-period In 0.08Ga 0.92N/In 0.02Ga 0.98N MQW samples with different final temperatures before cooling-down and with different interruption times during QW growth were grown on sapphire substrates by using metalorganic chemical vapor deposition. We carried out temperature-dependant photoluminescence (PL) and PL excitation measurements to elucidate the quantum efficiency and the origin of the emission, respectively. From a comparison of PL spectra and luminescence efficiency, we conclude that (1) high temperature ramping-up and exposure steps degrade the optical properties of QWs by thermal damage, (2) the InGaN QWs can be protected from thermal damage by a GaN capping layer, and (3) the interruption time during the QW growth somewhat degrades the optical properties of QWs.

Original languageEnglish
Pages (from-to)L792-L795
JournalJournal of the Korean Physical Society
Volume44
Issue number4
Publication statusPublished - 2004 Apr
Externally publishedYes

Keywords

  • InGaN quantum well
  • Interruption time
  • Optical properties
  • Thermal damage

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Cho, Y. H., Son, C. W., Kim, J. Y., Kim, B. M., Lee, W. S., Lee, S. N., Son, J. K., Nam, O. H., & Park, Y. J. (2004). Influence of thermal damage and the interruption time on the optical properties of InGaN quantum well structures. Journal of the Korean Physical Society, 44(4), L792-L795.