TY - GEN
T1 - Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy
AU - Nishimura, Kenichi
AU - Lee, Hae Seok
AU - Suzuki, Hidetoshi
AU - Kawahigashi, Tetsuya
AU - Imai, Takahiro
AU - Saito, Kenji
AU - Ohshita, Yoshio
AU - Yamaguchi, Masafumi
PY - 2006
Y1 - 2006
N2 - GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2N 2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.
AB - GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2N 2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.
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U2 - 10.1109/WCPEC.2006.279581
DO - 10.1109/WCPEC.2006.279581
M3 - Conference contribution
AN - SCOPUS:41749083280
SN - 1424400163
SN - 9781424400164
T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
SP - 815
EP - 818
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Y2 - 7 May 2006 through 12 May 2006
ER -
