Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy

Kenichi Nishimura, Haeseok Lee, Hidetoshi Suzuki, Tetsuya Kawahigashi, Takahiro Imai, Kenji Saito, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2N 2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages815-818
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

Fingerprint

Chemical beam epitaxy
Growth temperature
Crystals
Substrates
Thin films
Dimethylhydrazines
Impurities
Epitaxial films
Surface morphology
Hydrogen
Carbon
Surface roughness

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Nishimura, K., Lee, H., Suzuki, H., Kawahigashi, T., Imai, T., Saito, K., ... Yamaguchi, M. (2007). Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 815-818). [4059754] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). https://doi.org/10.1109/WCPEC.2006.279581

Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. / Nishimura, Kenichi; Lee, Haeseok; Suzuki, Hidetoshi; Kawahigashi, Tetsuya; Imai, Takahiro; Saito, Kenji; Ohshita, Yoshio; Yamaguchi, Masafumi.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 815-818 4059754 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishimura, K, Lee, H, Suzuki, H, Kawahigashi, T, Imai, T, Saito, K, Ohshita, Y & Yamaguchi, M 2007, Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059754, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, pp. 815-818, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279581
Nishimura K, Lee H, Suzuki H, Kawahigashi T, Imai T, Saito K et al. Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 815-818. 4059754. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279581
Nishimura, Kenichi ; Lee, Haeseok ; Suzuki, Hidetoshi ; Kawahigashi, Tetsuya ; Imai, Takahiro ; Saito, Kenji ; Ohshita, Yoshio ; Yamaguchi, Masafumi. / Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. pp. 815-818 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).
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AU - Imai, Takahiro

AU - Saito, Kenji

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