Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy

Kenichi Nishimura; Haeseok Lee; Hidetoshi Suzuki; Tetsuya Kawahigashi; Takahiro Imai; Kenji Saito; Yoshio Ohshita; Masafumi Yamaguchi

doi:10.1109/WCPEC.2006.279581

Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy

Kenichi Nishimura, Haeseok Lee, Hidetoshi Suzuki, Tetsuya Kawahigashi, Takahiro Imai, Kenji Saito, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH₃)₂N ₂H₂). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages	815-818
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.2006.279581
Publication status	Published - 2007 Dec 1
Externally published	Yes
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

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ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Cite this

Nishimura, K., Lee, H., Suzuki, H., Kawahigashi, T., Imai, T., Saito, K., Ohshita, Y., & Yamaguchi, M. (2007). Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 815-818). [4059754] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). https://doi.org/10.1109/WCPEC.2006.279581

Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. / Nishimura, Kenichi; Lee, Haeseok; Suzuki, Hidetoshi; Kawahigashi, Tetsuya; Imai, Takahiro; Saito, Kenji; Ohshita, Yoshio; Yamaguchi, Masafumi.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 815-818 4059754 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishimura, K, Lee, H, Suzuki, H, Kawahigashi, T, Imai, T, Saito, K, Ohshita, Y & Yamaguchi, M 2007, Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059754, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, pp. 815-818, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279581

Nishimura K, Lee H, Suzuki H, Kawahigashi T, Imai T, Saito K et al. Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 815-818. 4059754. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279581

Nishimura, Kenichi ; Lee, Haeseok ; Suzuki, Hidetoshi ; Kawahigashi, Tetsuya ; Imai, Takahiro ; Saito, Kenji ; Ohshita, Yoshio ; Yamaguchi, Masafumi. / Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. pp. 815-818 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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abstract = "GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2N 2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.",

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10.1109/WCPEC.2006.279581