Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy

Kenichi Nishimura; Hae Seok Lee; Hidetoshi Suzuki; Tetsuya Kawahigashi; Takahiro Imai; Kenji Saito; Yoshio Ohshita; Masafumi Yamaguchi

doi:10.1109/WCPEC.2006.279581

Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy

Kenichi Nishimura, Hae Seok Lee, Hidetoshi Suzuki, Tetsuya Kawahigashi, Takahiro Imai, Kenji Saito, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH₃)₂N ₂H₂). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	815-818
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279581
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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10.1109/WCPEC.2006.279581

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Nishimura, K., Lee, H. S., Suzuki, H., Kawahigashi, T., Imai, T., Saito, K., Ohshita, Y., & Yamaguchi, M. (2006). Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 815-818). [4059754] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279581

Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. / Nishimura, Kenichi; Lee, Hae Seok; Suzuki, Hidetoshi; Kawahigashi, Tetsuya; Imai, Takahiro; Saito, Kenji; Ohshita, Yoshio; Yamaguchi, Masafumi.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 815-818 4059754 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishimura, K, Lee, HS, Suzuki, H, Kawahigashi, T, Imai, T, Saito, K, Ohshita, Y & Yamaguchi, M 2006, Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059754, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 815-818, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279581

Nishimura K, Lee HS, Suzuki H, Kawahigashi T, Imai T, Saito K et al. Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 815-818. 4059754. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279581

Nishimura, Kenichi ; Lee, Hae Seok ; Suzuki, Hidetoshi ; Kawahigashi, Tetsuya ; Imai, Takahiro ; Saito, Kenji ; Ohshita, Yoshio ; Yamaguchi, Masafumi. / Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 815-818 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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title = "Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy",

abstract = "GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2N 2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.",

author = "Kenichi Nishimura and Lee, {Hae Seok} and Hidetoshi Suzuki and Tetsuya Kawahigashi and Takahiro Imai and Kenji Saito and Yoshio Ohshita and Masafumi Yamaguchi",

year = "2006",

doi = "10.1109/WCPEC.2006.279581",

language = "English",

isbn = "1424400163",

series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

publisher = "IEEE Computer Society",

pages = "815--818",

booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

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AU - Nishimura, Kenichi

AU - Lee, Hae Seok

AU - Suzuki, Hidetoshi

AU - Kawahigashi, Tetsuya

AU - Imai, Takahiro

AU - Saito, Kenji

AU - Ohshita, Yoshio

AU - Yamaguchi, Masafumi

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N2 - GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2N 2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.

AB - GaAsN epitaxial thin films were grown on GaAs (001) substrate by chemical beam epitaxy with dimethylhydrazine ((CH3)2N 2H2). In the dependence of growth temperature on the N concentration, there were three distinct regions in which the dependence was different. At the growth temperature of 420°C, the N concentration increased with increasing surface step density that corresponds to misorientation angle of GaAs (001) substrate. When the samples grown on 2 and 10° off substrates were compared, the root-mean-squares of surface roughness decreased from 1.1 nm to 0.3nm, despite of the increase of N concentration. In addition, the reduction of the impurity concentrations (hydrogen and carbon) in the sample grown on the 10° off substrate was also observed. These results showed the surface morphology of the GaAsN thin films is affected by the step density, and the possibility to obtain (In)GaAsN thin film that has high N and low impurity concentration with keeping crystal quality.

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Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy

Abstract

Publication series

Other

ASJC Scopus subject areas

UN SDGs

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