Influences of growth temperature and surface steps on N concentration and crystal quality of GaAsN grown by chemical beam epitaxy

Kenichi Nishimura, Hae Seok Lee, Hidetoshi Suzuki, Tetsuya Kawahigashi, Takahiro Imai, Kenji Saito, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science

Chemical Compounds