Influences of partial melting and overheating on amorphization of Ge 2Sb 2Te 5 during the reset process

Min Soo Youm, Yong Tae Kim, Man Young Sung

Research output: Contribution to journalArticle

Abstract

It is very important to observe the change in the atomic structure of melt-quenched amorphous Ge 2Sb 2Te 5 (GST) to discover the failure mechanism of phase-change random access memory (PRAM) devices during the reset process. We fabricated the phase-change devices and measured the initial resistance changes with various reset pulse amplitudes. For the observation of the atomic structure changes of GST thin films, we designed the specimens for transmission electron microscopy (TEM) and annealed them below and above the melting temperature of OST (T m = 650 °C) before quenching. The annealed-and-quenched GST at 630 °C has a hexagonal structure with a grain size of about 10 nm after the partial melting. The annealed-and-quenched GST at 750 °C also has a hexagonal structure because of the latent heat. The observed atomic structures of GST are in accordance with the resistance changes inferred from the fabricated edge-contact type of PRAM cell.

Original languageEnglish
Pages (from-to)2657-2661
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number11
DOIs
Publication statusPublished - 2008 Nov 1

Fingerprint

Amorphization
atomic structure
Melting
random access memory
melting
Data storage equipment
Latent heat
Melting point
Quenching
latent heat
pulse amplitude
Transmission electron microscopy
Thin films
grain size
quenching
transmission electron microscopy
thin films
cells
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Influences of partial melting and overheating on amorphization of Ge 2Sb 2Te 5 during the reset process. / Youm, Min Soo; Kim, Yong Tae; Sung, Man Young.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 205, No. 11, 01.11.2008, p. 2657-2661.

Research output: Contribution to journalArticle

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