Abstract
This paper reports the influence of the thickness of the InAlGaAs spacer on the formation characteristics of five-stacked In As quantum dots (QDs) grown on InAlGaAs/InP. The emission wavelength for the five-stacked In As QD layers separated by a 5-nm-thick InAlGaAs spacer was 1.526 μm. As the spacer thickness was increased, the emission wavelength was at first red-shifted to 1.550 μm and remained constant thereafter. Also, the carrier lifetime of the In As QDs increased with increasing spacer thickness. The variations in the emission wavelength and in the carrier lifetime with the spacer thickness are most likely due to the change in the QD formation, as confirmed by transmission electron microscopy (TEM). The TEM images indicated that the influence of the accumulation of strain from the bottom QD layer on the formation of the upper QD layer, when a relatively thin spacer was used, was more important than the intrinsic phase separation of InAlGaAs. However, the intrinsic phase separation of the InAlGaAs layer became increasingly dominant as the spacer thickness was increased.
| Original language | English |
|---|---|
| Pages (from-to) | 1644-1649 |
| Number of pages | 6 |
| Journal | Journal of the Korean Physical Society |
| Volume | 54 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Apr 1 |
| Externally published | Yes |
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Keywords
- Optical properties
- Quantum dot
- Structural properties
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Influences of strain and phase separation on the alignment characteristics of five-stacked InAs/lnAIGaAs quantum dots grown on InP(001). / Kim, Jin Soo; Lee, Cheul Ro; Lee, In-Hwan; Leem, Jae Young; Lee, Joo In; Kim, Jong Su.
In: Journal of the Korean Physical Society, Vol. 54, No. 4, 01.04.2009, p. 1644-1649.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influences of strain and phase separation on the alignment characteristics of five-stacked InAs/lnAIGaAs quantum dots grown on InP(001)
AU - Kim, Jin Soo
AU - Lee, Cheul Ro
AU - Lee, In-Hwan
AU - Leem, Jae Young
AU - Lee, Joo In
AU - Kim, Jong Su
PY - 2009/4/1
Y1 - 2009/4/1
N2 - This paper reports the influence of the thickness of the InAlGaAs spacer on the formation characteristics of five-stacked In As quantum dots (QDs) grown on InAlGaAs/InP. The emission wavelength for the five-stacked In As QD layers separated by a 5-nm-thick InAlGaAs spacer was 1.526 μm. As the spacer thickness was increased, the emission wavelength was at first red-shifted to 1.550 μm and remained constant thereafter. Also, the carrier lifetime of the In As QDs increased with increasing spacer thickness. The variations in the emission wavelength and in the carrier lifetime with the spacer thickness are most likely due to the change in the QD formation, as confirmed by transmission electron microscopy (TEM). The TEM images indicated that the influence of the accumulation of strain from the bottom QD layer on the formation of the upper QD layer, when a relatively thin spacer was used, was more important than the intrinsic phase separation of InAlGaAs. However, the intrinsic phase separation of the InAlGaAs layer became increasingly dominant as the spacer thickness was increased.
AB - This paper reports the influence of the thickness of the InAlGaAs spacer on the formation characteristics of five-stacked In As quantum dots (QDs) grown on InAlGaAs/InP. The emission wavelength for the five-stacked In As QD layers separated by a 5-nm-thick InAlGaAs spacer was 1.526 μm. As the spacer thickness was increased, the emission wavelength was at first red-shifted to 1.550 μm and remained constant thereafter. Also, the carrier lifetime of the In As QDs increased with increasing spacer thickness. The variations in the emission wavelength and in the carrier lifetime with the spacer thickness are most likely due to the change in the QD formation, as confirmed by transmission electron microscopy (TEM). The TEM images indicated that the influence of the accumulation of strain from the bottom QD layer on the formation of the upper QD layer, when a relatively thin spacer was used, was more important than the intrinsic phase separation of InAlGaAs. However, the intrinsic phase separation of the InAlGaAs layer became increasingly dominant as the spacer thickness was increased.
KW - Optical properties
KW - Quantum dot
KW - Structural properties
UR - http://www.scopus.com/inward/record.url?scp=65649136986&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65649136986&partnerID=8YFLogxK
U2 - 10.3938/jkps.54.1644
DO - 10.3938/jkps.54.1644
M3 - Article
AN - SCOPUS:65649136986
VL - 54
SP - 1644
EP - 1649
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 4
ER -