InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

Wen Cheng Ke, Fang Wei Lee, Chih Yung Chiang, Zhong Yi Liang, Wei Kuo Chen, Tae Yeon Seong

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.

Original languageEnglish
Pages (from-to)34520-34529
Number of pages10
JournalACS Applied Materials and Interfaces
Volume8
Issue number50
DOIs
Publication statusPublished - 2016 Dec 21

Fingerprint

Aluminum Oxide
Sapphire
Light emitting diodes
Substrates
Electroluminescence
Stark effect
Strain relaxation
Wavelength
Buffer layers
Leakage currents
Temperature
Raman scattering
Masks
Etching
Energy gap
Photons

Keywords

  • diffuse reflection
  • dislocation
  • efficiency droop
  • electroluminescence
  • light-emitting diode
  • nanopatterns
  • Raman

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate. / Ke, Wen Cheng; Lee, Fang Wei; Chiang, Chih Yung; Liang, Zhong Yi; Chen, Wei Kuo; Seong, Tae Yeon.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 50, 21.12.2016, p. 34520-34529.

Research output: Contribution to journalArticle

Ke, Wen Cheng ; Lee, Fang Wei ; Chiang, Chih Yung ; Liang, Zhong Yi ; Chen, Wei Kuo ; Seong, Tae Yeon. / InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 50. pp. 34520-34529.
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AU - Chen, Wei Kuo

AU - Seong, Tae Yeon

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