InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Sukwon Kim, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga<inf>2</inf>O<inf>3</inf> targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10<sup>- 3</sup> Ω-cm<sup>2</sup> with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

Original languageEnglish
Pages (from-to)39-42
Number of pages4
JournalThin Solid Films
Volume591
DOIs
Publication statusPublished - 2015 Sep 30

Keywords

  • Hydrogen annealing
  • Indium gallium tin oxide
  • Transparent conductive electrode
  • Ultraviolet light-emitting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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