InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Sukwon Kim, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga<inf>2</inf>O<inf>3</inf> targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10<sup>- 3</sup> Ω-cm<sup>2</sup> with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

Original languageEnglish
Pages (from-to)39-42
Number of pages4
JournalThin Solid Films
Volume591
DOIs
Publication statusPublished - 2015 Sep 30

Fingerprint

gallium oxides
Gallium
Indium
Tin oxides
ultraviolet radiation
indium oxides
tin oxides
Light emitting diodes
indium
light emitting diodes
Electrodes
electrodes
transmittance
Sheet resistance
Contact resistance
contact resistance
Sputtering
Hydrogen
sputtering
output

Keywords

  • Hydrogen annealing
  • Indium gallium tin oxide
  • Transparent conductive electrode
  • Ultraviolet light-emitting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes. / Kim, Sukwon; Kim, Tae Geun.

In: Thin Solid Films, Vol. 591, 30.09.2015, p. 39-42.

Research output: Contribution to journalArticle

@article{bdafafa27c814272b207be45eb8e68b6,
title = "InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes",
abstract = "In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94{\%} at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9{\%} improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.",
keywords = "Hydrogen annealing, Indium gallium tin oxide, Transparent conductive electrode, Ultraviolet light-emitting diode",
author = "Sukwon Kim and Kim, {Tae Geun}",
year = "2015",
month = "9",
day = "30",
doi = "10.1016/j.tsf.2015.08.023",
language = "English",
volume = "591",
pages = "39--42",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

AU - Kim, Sukwon

AU - Kim, Tae Geun

PY - 2015/9/30

Y1 - 2015/9/30

N2 - In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

AB - In this study, In- and Sn-doped GaO (IGTO) is proposed as an alternative transparent conductive electrode for indium tin oxide (ITO) to improve the performance of InGaN/AlGaInN-based near ultraviolet light-emitting diodes (NUV LEDs). IGTO films were prepared by co-sputtering the ITO and Ga2O3 targets under various target power ratios. Among those, IGTO films post-annealed at 700 °C under a hydrogen environment gave rise to a transmittance of 94% at 385 nm and a contact resistance of 9.4 × 10- 3 Ω-cm2 with a sheet resistance of 124 Ω/T. Compared to ITO-based NUV LEDs, the IGTO-based NUV LED showed a 9% improvement in the light output power, probably due to IGTO's higher transmittance, although the forward voltage was still higher by 0.23 V.

KW - Hydrogen annealing

KW - Indium gallium tin oxide

KW - Transparent conductive electrode

KW - Ultraviolet light-emitting diode

UR - http://www.scopus.com/inward/record.url?scp=84942026364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942026364&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2015.08.023

DO - 10.1016/j.tsf.2015.08.023

M3 - Article

VL - 591

SP - 39

EP - 42

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -