InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes

Physics & Astronomy

• contact resistance 24%
• electric potential 12%
• electrodes 43%
• gallium oxides 90%
• hydrogen 14%
• indium 67%
• indium oxides 69%
• light emitting diodes 56%
• output 13%
• performance 10%
• sputtering 18%
• tin oxides 67%
• transmittance 39%
• ultraviolet radiation 70%

Engineering & Materials Science

• Contact resistance 27%
• Electric potential 12%
• Electrodes 53%
• Gallium 100%
• Hydrogen 18%
• Indium 91%
• Light emitting diodes 69%
• Sheet resistance 32%
• Sputtering 30%
• Tin oxides 97%

Chemical Compounds

• Behavior as Electrode 35%
• Contact Resistance 44%
• Environment 20%
• Hydrogen 17%
• Liquid Film 34%
• Sheet Resistance 42%
• Tin Oxide 75%
• Transmittance 70%
• Voltage 25%