InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates

Young Hoon Sung, Jaemin Park, Eun Seo Choi, Tae Hoon Chung, Tae Won Lee, Hee Jun Kim, Jeong Min Baik, Heon Lee

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Abstract

In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.

Original languageEnglish
Article number111082
JournalMicroelectronic Engineering
Volume216
DOIs
Publication statusPublished - 2019 Aug 15

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Keywords

  • Hollow LEDs
  • Hollow pattern
  • Light emitting diode
  • Micro LEDs
  • Nano imprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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