Abstract
In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.
| Original language | English |
|---|---|
| Article number | 111082 |
| Journal | Microelectronic Engineering |
| Volume | 216 |
| DOIs | |
| Publication status | Published - 2019 Aug 15 |
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Keywords
- Hollow LEDs
- Hollow pattern
- Light emitting diode
- Micro LEDs
- Nano imprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates. / Sung, Young Hoon; Park, Jaemin; Choi, Eun Seo; Chung, Tae Hoon; Lee, Tae Won; Kim, Hee Jun; Baik, Jeong Min; Lee, Heon.
In: Microelectronic Engineering, Vol. 216, 111082, 15.08.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates
AU - Sung, Young Hoon
AU - Park, Jaemin
AU - Choi, Eun Seo
AU - Chung, Tae Hoon
AU - Lee, Tae Won
AU - Kim, Hee Jun
AU - Baik, Jeong Min
AU - Lee, Heon
PY - 2019/8/15
Y1 - 2019/8/15
N2 - In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.
AB - In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.
KW - Hollow LEDs
KW - Hollow pattern
KW - Light emitting diode
KW - Micro LEDs
KW - Nano imprint
UR - http://www.scopus.com/inward/record.url?scp=85069519428&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069519428&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2019.111082
DO - 10.1016/j.mee.2019.111082
M3 - Article
AN - SCOPUS:85069519428
VL - 216
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
M1 - 111082
ER -