InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

Chul Huh, Hyun Soo Kim, Sang Woo Kim, ji Myon Lee, Dong Joon Kim, In-Hwan Lee, Seong ju Park

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12 Citations (Scopus)


The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and [formula omitted] Ω cm 2 , demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.

Original languageEnglish
Pages (from-to)4464-4466
Number of pages3
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2000 May 1
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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