InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN

Chul Huh, Hyun Soo Kim, Sang Woo Kim, ji Myon Lee, Dong Joon Kim, In-Hwan Lee, Seong ju Park

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and [formula omitted] Ω cm 2 , demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.

Original languageEnglish
Pages (from-to)4464-4466
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9
DOIs
Publication statusPublished - 2000 May 1
Externally publishedYes

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light emitting diodes
quantum wells
thin films
contact resistance
electroluminescence
transmittance
electrical properties
fabrication
output
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN. / Huh, Chul; Kim, Hyun Soo; Kim, Sang Woo; Lee, ji Myon; Kim, Dong Joon; Lee, In-Hwan; Park, Seong ju.

In: Journal of Applied Physics, Vol. 87, No. 9, 01.05.2000, p. 4464-4466.

Research output: Contribution to journalArticle

Huh, Chul ; Kim, Hyun Soo ; Kim, Sang Woo ; Lee, ji Myon ; Kim, Dong Joon ; Lee, In-Hwan ; Park, Seong ju. / InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 9. pp. 4464-4466.
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