Initial stage of Ag epitaxial growth on Sb-terminated Si(111) surface

K. H. Park, Jeong Sook Ha, W. S. Yun, E. H. Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In the initial stage of Ag film growth on the Sb-terminated Si(111) surface, we have found that the surface diffusion of Ag atoms was greatly suppressed, thereby producing atomically uniform epitaxial Ag films. It was also found that the crystallographic direction of the grown Ag islands matched well with that of the substrate. The aspect ratios (height-to-diameter) of the Ag islands did not increase noticeably even after thermal annealing, which is quite different to the case of Ag growth on clean Si(111). The effects of the thermally stable Sb-terminated Si(111) surface and Sb segregation on Ag islands on the formation of atomically uniform Ag films are also discussed.

Original languageEnglish
Pages (from-to)46-53
Number of pages8
JournalSurface Science
Volume405
Issue number1
Publication statusPublished - 1998 May 12
Externally publishedYes

Fingerprint

Epitaxial growth
Surface diffusion
Film growth
Aspect ratio
Annealing
surface diffusion
Atoms
aspect ratio
Substrates
annealing
atoms
Hot Temperature
Direction compound

Keywords

  • Antimony
  • Epitaxy
  • Growth
  • Low energy electron diffraction (LEED)
  • Scanning tunneling microscopy
  • Silicon
  • Silver
  • Surface diffusion
  • Surface segregation

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Park, K. H., Ha, J. S., Yun, W. S., & Lee, E. H. (1998). Initial stage of Ag epitaxial growth on Sb-terminated Si(111) surface. Surface Science, 405(1), 46-53.

Initial stage of Ag epitaxial growth on Sb-terminated Si(111) surface. / Park, K. H.; Ha, Jeong Sook; Yun, W. S.; Lee, E. H.

In: Surface Science, Vol. 405, No. 1, 12.05.1998, p. 46-53.

Research output: Contribution to journalArticle

Park, KH, Ha, JS, Yun, WS & Lee, EH 1998, 'Initial stage of Ag epitaxial growth on Sb-terminated Si(111) surface', Surface Science, vol. 405, no. 1, pp. 46-53.
Park, K. H. ; Ha, Jeong Sook ; Yun, W. S. ; Lee, E. H. / Initial stage of Ag epitaxial growth on Sb-terminated Si(111) surface. In: Surface Science. 1998 ; Vol. 405, No. 1. pp. 46-53.
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