Abstract
The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750°C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (1×10 -9 torr), heavy surface etching by oxygen was observed at higher O 2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 205-210 |
| Number of pages | 6 |
| Volume | 404 |
| Publication status | Published - 1996 Jan 1 |
| Externally published | Yes |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 1995 Nov 26 → 1995 Dec 1 |
Other
| Other | Proceedings of the 1995 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 95/11/26 → 95/12/1 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. / Ha, Jeong Sook; Park, Kang Ho; Park, Seong Ju; Lee, El Hang.
Materials Research Society Symposium Proceedings. Vol. 404 1996. p. 205-210.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope
AU - Ha, Jeong Sook
AU - Park, Kang Ho
AU - Park, Seong Ju
AU - Lee, El Hang
PY - 1996/1/1
Y1 - 1996/1/1
N2 - The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750°C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (1×10 -9 torr), heavy surface etching by oxygen was observed at higher O 2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.
AB - The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750°C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (1×10 -9 torr), heavy surface etching by oxygen was observed at higher O 2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.
UR - http://www.scopus.com/inward/record.url?scp=0029721495&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029721495&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029721495
VL - 404
SP - 205
EP - 210
BT - Materials Research Society Symposium Proceedings
ER -