Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope

Jeong Sook Ha, Kang Ho Park, Seong Ju Park, El Hang Lee

Research output: Contribution to conferencePaper

Abstract

The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750°C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (1×10-9 torr), heavy surface etching by oxygen was observed at higher O2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.

Original languageEnglish
Pages205-210
Number of pages6
Publication statusPublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 1995 Nov 261995 Dec 1

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period95/11/2695/12/1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope'. Together they form a unique fingerprint.

  • Cite this

    Ha, J. S., Park, K. H., Park, S. J., & Lee, E. H. (1996). Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. 205-210. Paper presented at Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, .