Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope

Jeong Sook Ha, Kang Ho Park, Seong Ju Park, El Hang Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750°C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (1×10 -9 torr), heavy surface etching by oxygen was observed at higher O 2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages205-210
Number of pages6
Volume404
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 1995 Nov 261995 Dec 1

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period95/11/2695/12/1

Fingerprint

Microscopes
Scanning
Oxidation
Oxygen
Partial pressure
Potential energy
Temperature
Etching
Monolayers

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ha, J. S., Park, K. H., Park, S. J., & Lee, E. H. (1996). Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. In Materials Research Society Symposium Proceedings (Vol. 404, pp. 205-210)

Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. / Ha, Jeong Sook; Park, Kang Ho; Park, Seong Ju; Lee, El Hang.

Materials Research Society Symposium Proceedings. Vol. 404 1996. p. 205-210.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ha, JS, Park, KH, Park, SJ & Lee, EH 1996, Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. in Materials Research Society Symposium Proceedings. vol. 404, pp. 205-210, Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, 95/11/26.
Ha JS, Park KH, Park SJ, Lee EH. Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. In Materials Research Society Symposium Proceedings. Vol. 404. 1996. p. 205-210
Ha, Jeong Sook ; Park, Kang Ho ; Park, Seong Ju ; Lee, El Hang. / Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. Materials Research Society Symposium Proceedings. Vol. 404 1996. pp. 205-210
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