Abstract
The initial oxidation of Si(111)-7×7 surface has been investigated by taking the STM images of samples dosed with oxygen at room temperature and high temperatures between 500°C and 750°C. In particular, different site selectivities between two oxygen-induced features, bright and dark sites, were observed and explained in terms of the difference in potential energy curves. In addition to such a strong site selectivity under low oxygen partial pressure (1×10-9 torr), heavy surface etching by oxygen was observed at higher O2 partial pressures and temperatures resulting in the high density of monolayer-deep etch marks on terraces.
| Original language | English |
|---|---|
| Pages | 205-210 |
| Number of pages | 6 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 1995 Nov 26 → 1995 Dec 1 |
Other
| Other | Proceedings of the 1995 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 95/11/26 → 95/12/1 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Ha, J. S., Park, K. H., Park, S. J., & Lee, E. H. (1996). Initial stage of oxidation on Si(111)-7×7 surface investigated by scanning tunneling microscope. 205-210. Paper presented at Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, .