In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

June O. Song, Kyung Kook Kim, Hyunsoo Kim, Hyun Gi Hong, Hyeonseok Na, Tae Yeon Seong

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.

Original languageEnglish
Pages (from-to)270-272
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume10
Issue number9
DOIs
Publication statusPublished - 2007 Aug 1

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Tin oxides
indium oxides
Indium
tin oxides
Light emitting diodes
Luminance
brightness
light emitting diodes
Electrodes
electrodes
Ohmic contacts
low resistance
Contact resistance
Bias voltage
contact resistance
indium
electric contacts
interlayers
transmittance
injection

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes. / Song, June O.; Kim, Kyung Kook; Kim, Hyunsoo; Hong, Hyun Gi; Na, Hyeonseok; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 9, 01.08.2007, p. 270-272.

Research output: Contribution to journalArticle

Song, June O. ; Kim, Kyung Kook ; Kim, Hyunsoo ; Hong, Hyun Gi ; Na, Hyeonseok ; Seong, Tae Yeon. / In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes. In: Electrochemical and Solid-State Letters. 2007 ; Vol. 10, No. 9. pp. 270-272.
@article{98af189f301b4034913c589c6bc90d78,
title = "In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes",
abstract = "Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8{\%} at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91{\%} at 20 mA compared to LEDs with the oxidized NiAu contacts.",
author = "Song, {June O.} and Kim, {Kyung Kook} and Hyunsoo Kim and Hong, {Hyun Gi} and Hyeonseok Na and Seong, {Tae Yeon}",
year = "2007",
month = "8",
day = "1",
doi = "10.1149/1.2750442",
language = "English",
volume = "10",
pages = "270--272",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

AU - Song, June O.

AU - Kim, Kyung Kook

AU - Kim, Hyunsoo

AU - Hong, Hyun Gi

AU - Na, Hyeonseok

AU - Seong, Tae Yeon

PY - 2007/8/1

Y1 - 2007/8/1

N2 - Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.

AB - Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.

UR - http://www.scopus.com/inward/record.url?scp=34547194196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547194196&partnerID=8YFLogxK

U2 - 10.1149/1.2750442

DO - 10.1149/1.2750442

M3 - Article

VL - 10

SP - 270

EP - 272

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 9

ER -