In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes

June O. Song, Kyung Kook Kim, Hyunsoo Kim, Hyun Gi Hong, Hyeonseok Na, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Indium interlayers (10 nm thick) were used to form highly transparent and low-resistance indium-tin oxide (ITO) (200 nm) ohmic contacts to p-GaN for high-brightness light emitting diodes (LEDs). The In/ITO contacts became ohmic with a specific contact resistance of 1.46× 10-3 cm2 and produced transmittance of 95.8% at wavelength of 460 nm when annealed at 530°C. Blue LEDs fabricated with the annealed In/ITO p-type contact layers exhibited a forward-bias voltage of 3.42 V at an injection current of 20 mA. The light output power of LEDs with the In/ITO contacts was enhanced 91% at 20 mA compared to LEDs with the oxidized NiAu contacts.

Original languageEnglish
Pages (from-to)270-272
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number9
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'In/ITO p-Type Electrode for High-Brightness GaN-Based Light Emitting Diodes'. Together they form a unique fingerprint.

Cite this