TY - GEN
T1 - InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power
AU - Kim, Jungsoo
AU - Son, Heekang
AU - Kim, Doyoon
AU - Song, Kiryong
AU - Yoo, Junghwan
AU - Rieh, Jae Sung
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2016-0-00185).
Publisher Copyright:
© 2020 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads.
AB - THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads.
KW - Coupled-line
KW - Heterojunction bipolar transistor (HBT)
KW - Oscillators
KW - Terahertz (THz)
UR - http://www.scopus.com/inward/record.url?scp=85094213350&partnerID=8YFLogxK
U2 - 10.1109/IMS30576.2020.9223991
DO - 10.1109/IMS30576.2020.9223991
M3 - Conference contribution
AN - SCOPUS:85094213350
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 767
EP - 770
BT - IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Y2 - 4 August 2020 through 6 August 2020
ER -