InP HBT oscillators operating up to 682 GHz with coupled-line load for improved efficiency and output power

Jungsoo Kim, Heekang Son, Doyoon Kim, Kiryong Song, Junghwan Yoo, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work shows that the common-base cross-coupled push-push oscillator topology is improved by adopting a coupled-line structure, in which DC blocking capacitors and other transmission lines are replaced by a pair of coupled lines. The coupled lines enable efficient impedance and phase matching with a small area, resulting in improved output power and efficiency. Three types of oscillators with a slight dimensional variation were fabricated. The measured oscillation frequency of the three oscillators are 628 - 682 GHz, 556 - 610 GHz and 509 - 548 GHz, respectively, with bias-based tuning. The maximum output power and DC-to-RF efficiency of oscillators are up to -10 dBm and 0.19 %, respectively. The circuit occupies only around 0.014 mm2 excluding the probing pads.

Original languageEnglish
Title of host publicationIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages767-770
Number of pages4
ISBN (Electronic)9781728168159
DOIs
Publication statusPublished - 2020 Aug
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: 2020 Aug 42020 Aug 6

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2020-August
ISSN (Print)0149-645X

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
CountryUnited States
CityVirtual, Los Angeles
Period20/8/420/8/6

Keywords

  • Coupled-line
  • Heterojunction bipolar transistor (HBT)
  • Oscillators
  • Terahertz (THz)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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