Abstract
Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.
Original language | English |
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Pages (from-to) | 380-383 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 534 |
DOIs | |
Publication status | Published - 2013 May 1 |
Keywords
- Adherent thick film
- Cubic boron nitride
- Delamination
- Hydrogen addition
- Interfacial layer
- Nanocrystalline diamond buffer
- Residual stress reduction
- Unbalanced magnetron sputtering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry