Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method

J. S. Ko, J. K. Park, W. S. Lee, Joo Youl Huh, Y. J. Baik

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1 Citation (Scopus)

Abstract

Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.

Original languageEnglish
Pages (from-to)380-383
Number of pages4
JournalThin Solid Films
Volume534
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

Cubic boron nitride
Diamond films
boron nitrides
diamond films
Magnetron sputtering
insertion
Hydrogen
magnetron sputtering
adhesion
Adhesion
Gases
Thin films
Diamond
Boron nitride
hydrogen
Buffer layers
thin films
gases
Delamination
Diamonds

Keywords

  • Adherent thick film
  • Cubic boron nitride
  • Delamination
  • Hydrogen addition
  • Interfacial layer
  • Nanocrystalline diamond buffer
  • Residual stress reduction
  • Unbalanced magnetron sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

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title = "Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method",
abstract = "Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.",
keywords = "Adherent thick film, Cubic boron nitride, Delamination, Hydrogen addition, Interfacial layer, Nanocrystalline diamond buffer, Residual stress reduction, Unbalanced magnetron sputtering",
author = "Ko, {J. S.} and Park, {J. K.} and Lee, {W. S.} and Huh, {Joo Youl} and Baik, {Y. J.}",
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T1 - Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method

AU - Ko, J. S.

AU - Park, J. K.

AU - Lee, W. S.

AU - Huh, Joo Youl

AU - Baik, Y. J.

PY - 2013/5/1

Y1 - 2013/5/1

N2 - Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.

AB - Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.

KW - Adherent thick film

KW - Cubic boron nitride

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KW - Interfacial layer

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KW - Residual stress reduction

KW - Unbalanced magnetron sputtering

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