Abstract
Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 380-383 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 534 |
| DOIs | |
| Publication status | Published - 2013 May 1 |
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Keywords
- Adherent thick film
- Cubic boron nitride
- Delamination
- Hydrogen addition
- Interfacial layer
- Nanocrystalline diamond buffer
- Residual stress reduction
- Unbalanced magnetron sputtering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method. / Ko, J. S.; Park, J. K.; Lee, W. S.; Huh, Joo Youl; Baik, Y. J.
In: Thin Solid Films, Vol. 534, 01.05.2013, p. 380-383.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method
AU - Ko, J. S.
AU - Park, J. K.
AU - Lee, W. S.
AU - Huh, Joo Youl
AU - Baik, Y. J.
PY - 2013/5/1
Y1 - 2013/5/1
N2 - Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.
AB - Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 μm) Si strips (3 × 40 mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of - 40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 μm thickness adherent to the substrate was obtained.
KW - Adherent thick film
KW - Cubic boron nitride
KW - Delamination
KW - Hydrogen addition
KW - Interfacial layer
KW - Nanocrystalline diamond buffer
KW - Residual stress reduction
KW - Unbalanced magnetron sputtering
UR - http://www.scopus.com/inward/record.url?scp=84876678538&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876678538&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.02.058
DO - 10.1016/j.tsf.2013.02.058
M3 - Article
AN - SCOPUS:84876678538
VL - 534
SP - 380
EP - 383
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -