Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using Bi-layer nanoimprint lithography

Kyeong Jae Byeon, Seon Yong Hwang, Chang Hee Hong, Jong Hyeob Baek, Heon Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCI 4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

Original languageEnglish
Pages (from-to)5242-5246
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume8
Issue number10
DOIs
Publication statusPublished - 2008 Oct

Keywords

  • Light-Emitting Diodes
  • Nanoimprint Lithography
  • Photoluminescence
  • Photon Extraction Efficiency
  • Two Dimensional Photonic Crystals

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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