Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors

Soo Jin Kim, Mi Jang, Hee Yeon Yang, Jinhan Cho, Ho Sun Lim, Hoichang Yang, Jung Ah Lim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.

Original languageEnglish
Pages (from-to)11721-11731
Number of pages11
JournalACS Applied Materials and Interfaces
Volume9
Issue number13
DOIs
Publication statusPublished - 2017 Apr 5

Fingerprint

Gate dielectrics
Thin film transistors
Polymers
Irradiation
Substrates
Melamine
Semiconducting organic compounds
Industrial heating
Formaldehyde
Leakage currents
Organic solvents
Synchronization
Capacitance
Current density
Plastics
Thin films

Keywords

  • cross-linking
  • flexible substrate
  • gate dielectric
  • intensely pulsed white light
  • organic thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors. / Kim, Soo Jin; Jang, Mi; Yang, Hee Yeon; Cho, Jinhan; Lim, Ho Sun; Yang, Hoichang; Lim, Jung Ah.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 13, 05.04.2017, p. 11721-11731.

Research output: Contribution to journalArticle

Kim, Soo Jin ; Jang, Mi ; Yang, Hee Yeon ; Cho, Jinhan ; Lim, Ho Sun ; Yang, Hoichang ; Lim, Jung Ah. / Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 13. pp. 11721-11731.
@article{fdb9b10eaecd48e88dfaadb5dd48f252,
title = "Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors",
abstract = "We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.",
keywords = "cross-linking, flexible substrate, gate dielectric, intensely pulsed white light, organic thin-film transistors",
author = "Kim, {Soo Jin} and Mi Jang and Yang, {Hee Yeon} and Jinhan Cho and Lim, {Ho Sun} and Hoichang Yang and Lim, {Jung Ah}",
year = "2017",
month = "4",
day = "5",
doi = "10.1021/acsami.6b14957",
language = "English",
volume = "9",
pages = "11721--11731",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "13",

}

TY - JOUR

T1 - Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors

AU - Kim, Soo Jin

AU - Jang, Mi

AU - Yang, Hee Yeon

AU - Cho, Jinhan

AU - Lim, Ho Sun

AU - Yang, Hoichang

AU - Lim, Jung Ah

PY - 2017/4/5

Y1 - 2017/4/5

N2 - We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.

AB - We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.

KW - cross-linking

KW - flexible substrate

KW - gate dielectric

KW - intensely pulsed white light

KW - organic thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=85017180401&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017180401&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b14957

DO - 10.1021/acsami.6b14957

M3 - Article

AN - SCOPUS:85017180401

VL - 9

SP - 11721

EP - 11731

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 13

ER -