Integrated all-organic 8 × 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array

Yongsung Ji, An Na Cha, Sang A. Lee, Sukang Bae, Sang Hyun Lee, Dong Su Lee, Hyejung Choi, Gunuk Wang, Tae Wook Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Cross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code.

Original languageEnglish
Pages (from-to)66-71
Number of pages6
JournalOrganic Electronics: physics, materials, applications
Volume29
DOIs
Publication statusPublished - 2016 Feb 1

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Keywords

  • Nonvolatile memory
  • One transistor-one resistor architecture
  • Organic resistive memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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