Integrated devices based on networks of nanotubes and nanowires

Byung Yang Lee, Moon Gyu Sung, Hyungwoo Lee, Seon Namgung, Sung Young Park, Dong Shin Choi, Seunghun Hong

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Although advanced devices based on nanotubes (NTs) and nanowires (NWs) are drawing much attention, devices based on a single NT or NW are not suitable for general manufacturing purposes, as it is still extremely difficult to control the electronic properties, growth and alignment of individual NTs or NWs on an industrially reliable scale. An alternative strategy for implementing NTs or NWs in real-world devices is the use of NT- or NW-network-based structures containing a number of NTs or NWs. Herein, we review the recent progress in NT/NW-network-based integrated devices. The technology for NW/NT-network-based devices is supported by massive integration methods, such as directed assembly, printing and directed growth, and devices based on NW/NT networks display several unique properties, such as percolating conduction and scaling behaviors, that differentiate them from individual NT/NW-based devices. A variety of applications are possible for NT/NW networks, including transistors and sensors, all of which offer unique characteristics for use in integrated nanoelectronics.

Original languageEnglish
Pages (from-to)103-111
Number of pages9
JournalNPG Asia Materials
Volume2
Issue number3
DOIs
Publication statusPublished - 2010 Jul 1
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Modelling and Simulation

Cite this

Lee, B. Y., Sung, M. G., Lee, H., Namgung, S., Park, S. Y., Choi, D. S., & Hong, S. (2010). Integrated devices based on networks of nanotubes and nanowires. NPG Asia Materials, 2(3), 103-111. https://doi.org/10.1038/asiamat.2010.83