Abstract
Although advanced devices based on nanotubes (NTs) and nanowires (NWs) are drawing much attention, devices based on a single NT or NW are not suitable for general manufacturing purposes, as it is still extremely difficult to control the electronic properties, growth and alignment of individual NTs or NWs on an industrially reliable scale. An alternative strategy for implementing NTs or NWs in real-world devices is the use of NT- or NW-network-based structures containing a number of NTs or NWs. Herein, we review the recent progress in NT/NW-network-based integrated devices. The technology for NW/NT-network-based devices is supported by massive integration methods, such as directed assembly, printing and directed growth, and devices based on NW/NT networks display several unique properties, such as percolating conduction and scaling behaviors, that differentiate them from individual NT/NW-based devices. A variety of applications are possible for NT/NW networks, including transistors and sensors, all of which offer unique characteristics for use in integrated nanoelectronics.
| Original language | English |
|---|---|
| Pages (from-to) | 103-111 |
| Number of pages | 9 |
| Journal | NPG Asia Materials |
| Volume | 2 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2010 Jul 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Modelling and Simulation
Cite this
Integrated devices based on networks of nanotubes and nanowires. / Lee, Byung Yang; Sung, Moon Gyu; Lee, Hyungwoo; Namgung, Seon; Park, Sung Young; Choi, Dong Shin; Hong, Seunghun.
In: NPG Asia Materials, Vol. 2, No. 3, 01.07.2010, p. 103-111.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Integrated devices based on networks of nanotubes and nanowires
AU - Lee, Byung Yang
AU - Sung, Moon Gyu
AU - Lee, Hyungwoo
AU - Namgung, Seon
AU - Park, Sung Young
AU - Choi, Dong Shin
AU - Hong, Seunghun
PY - 2010/7/1
Y1 - 2010/7/1
N2 - Although advanced devices based on nanotubes (NTs) and nanowires (NWs) are drawing much attention, devices based on a single NT or NW are not suitable for general manufacturing purposes, as it is still extremely difficult to control the electronic properties, growth and alignment of individual NTs or NWs on an industrially reliable scale. An alternative strategy for implementing NTs or NWs in real-world devices is the use of NT- or NW-network-based structures containing a number of NTs or NWs. Herein, we review the recent progress in NT/NW-network-based integrated devices. The technology for NW/NT-network-based devices is supported by massive integration methods, such as directed assembly, printing and directed growth, and devices based on NW/NT networks display several unique properties, such as percolating conduction and scaling behaviors, that differentiate them from individual NT/NW-based devices. A variety of applications are possible for NT/NW networks, including transistors and sensors, all of which offer unique characteristics for use in integrated nanoelectronics.
AB - Although advanced devices based on nanotubes (NTs) and nanowires (NWs) are drawing much attention, devices based on a single NT or NW are not suitable for general manufacturing purposes, as it is still extremely difficult to control the electronic properties, growth and alignment of individual NTs or NWs on an industrially reliable scale. An alternative strategy for implementing NTs or NWs in real-world devices is the use of NT- or NW-network-based structures containing a number of NTs or NWs. Herein, we review the recent progress in NT/NW-network-based integrated devices. The technology for NW/NT-network-based devices is supported by massive integration methods, such as directed assembly, printing and directed growth, and devices based on NW/NT networks display several unique properties, such as percolating conduction and scaling behaviors, that differentiate them from individual NT/NW-based devices. A variety of applications are possible for NT/NW networks, including transistors and sensors, all of which offer unique characteristics for use in integrated nanoelectronics.
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U2 - 10.1038/asiamat.2010.83
DO - 10.1038/asiamat.2010.83
M3 - Article
AN - SCOPUS:84863115793
VL - 2
SP - 103
EP - 111
JO - NPG Asia Materials
JF - NPG Asia Materials
SN - 1884-4049
IS - 3
ER -