Interaction of lattice dislocations with a grain boundary during nanoindentation simulation

Ho Jang, Diana Farkas

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Interaction of dislocations with a Σ = 5 (210) [001] grain boundary was investigated using molecular dynamics simulation with EAM potentials. The results showed that the dislocation transmitted across the grain boundary during nanoindentation and left a step in the boundary plane. Burgers vector analysis suggested that a partial dislocation in grain I merged into the grain boundary and it was dissociated into another partial dislocation in grain II and a grain boundary dislocation, introducing a step in the grain boundary. Simulation also indicated that, after the transmission, the leading partial dislocation in the grain across the boundary was not followed by the trailing partials, expanding the width of the stacking fault. The results suggested that the creation of the step that accompanied grain boundary motion and expansion of the stacking fault caused resistance to nanoindentation.

Original languageEnglish
Pages (from-to)868-871
Number of pages4
JournalMaterials Letters
Volume61
Issue number3
DOIs
Publication statusPublished - 2007 Feb 1

Fingerprint

Nanoindentation
nanoindentation
Dislocations (crystals)
Crystal lattices
Grain boundaries
grain boundaries
simulation
Stacking faults
interactions
crystal defects
vector analysis
Burgers vector
embedded atom method
Molecular dynamics
molecular dynamics
expansion
Computer simulation

Keywords

  • Dislocation
  • Grain boundary
  • Molecular dynamics
  • Nanoindentation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Interaction of lattice dislocations with a grain boundary during nanoindentation simulation. / Jang, Ho; Farkas, Diana.

In: Materials Letters, Vol. 61, No. 3, 01.02.2007, p. 868-871.

Research output: Contribution to journalArticle

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