Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes

Yeonsik Jang, Sung Joo Kwon, Jaeho Shin, Hyunhak Jeong, Wang Taek Hwang, Junwoo Kim, Jeongmin Koo, Taeg Yeoung Ko, Sunmin Ryu, Gunuk Wang, Tae Woo Lee, Takhee Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.

Original languageEnglish
Pages (from-to)42043-42049
Number of pages7
JournalACS Applied Materials and Interfaces
Volume9
Issue number48
DOIs
Publication statusPublished - 2017 Dec 6

Fingerprint

Molecular electronics
Graphite
Transport properties
Graphene
Charge transfer
Electrodes
Charge injection
Self assembled monolayers
Molecular orbitals
Multilayers
Current density
Doping (additives)
Molecules
Acids

Keywords

  • benzenedithiol (BDT)
  • charge transport
  • coherent transport model
  • graphene doping
  • interface engineering
  • molecular electronics
  • self-assembled monolayer
  • transition voltage spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes. / Jang, Yeonsik; Kwon, Sung Joo; Shin, Jaeho; Jeong, Hyunhak; Hwang, Wang Taek; Kim, Junwoo; Koo, Jeongmin; Ko, Taeg Yeoung; Ryu, Sunmin; Wang, Gunuk; Lee, Tae Woo; Lee, Takhee.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 48, 06.12.2017, p. 42043-42049.

Research output: Contribution to journalArticle

Jang, Yeonsik ; Kwon, Sung Joo ; Shin, Jaeho ; Jeong, Hyunhak ; Hwang, Wang Taek ; Kim, Junwoo ; Koo, Jeongmin ; Ko, Taeg Yeoung ; Ryu, Sunmin ; Wang, Gunuk ; Lee, Tae Woo ; Lee, Takhee. / Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 48. pp. 42043-42049.
@article{b1b14df5b1f84dd08c48d56d0c67460a,
title = "Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes",
abstract = "In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.",
keywords = "benzenedithiol (BDT), charge transport, coherent transport model, graphene doping, interface engineering, molecular electronics, self-assembled monolayer, transition voltage spectroscopy",
author = "Yeonsik Jang and Kwon, {Sung Joo} and Jaeho Shin and Hyunhak Jeong and Hwang, {Wang Taek} and Junwoo Kim and Jeongmin Koo and Ko, {Taeg Yeoung} and Sunmin Ryu and Gunuk Wang and Lee, {Tae Woo} and Takhee Lee",
year = "2017",
month = "12",
day = "6",
doi = "10.1021/acsami.7b13156",
language = "English",
volume = "9",
pages = "42043--42049",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "48",

}

TY - JOUR

T1 - Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically p-Doped Graphene Electrodes

AU - Jang, Yeonsik

AU - Kwon, Sung Joo

AU - Shin, Jaeho

AU - Jeong, Hyunhak

AU - Hwang, Wang Taek

AU - Kim, Junwoo

AU - Koo, Jeongmin

AU - Ko, Taeg Yeoung

AU - Ryu, Sunmin

AU - Wang, Gunuk

AU - Lee, Tae Woo

AU - Lee, Takhee

PY - 2017/12/6

Y1 - 2017/12/6

N2 - In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.

AB - In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.

KW - benzenedithiol (BDT)

KW - charge transport

KW - coherent transport model

KW - graphene doping

KW - interface engineering

KW - molecular electronics

KW - self-assembled monolayer

KW - transition voltage spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85037748299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85037748299&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b13156

DO - 10.1021/acsami.7b13156

M3 - Article

VL - 9

SP - 42043

EP - 42049

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 48

ER -