Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance

Chang Hoon Lee, Sang Hwa Kim, Jin Young Choi, Joon Kim

Research output: Contribution to journalArticle

Abstract

In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO3/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O2/(Ar + O2) ratio. Our result showed that the EMR signal intensities were increased with increasing O2/(Ar + O2) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y2O3 layer and the amorphous Si-enriched Y-Si interface layer in YMnO3/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO3/Si film and the content of Mn nanoclusters within the polycrystalline Y2O3 layer and/or the amorphous Y-Si layer was discussed.

Original languageEnglish
Pages (from-to)10-12
Number of pages3
JournalCurrent Applied Physics
Volume7
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

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Keywords

  • Electron magnetic resonance
  • Mn nanoclusters
  • YMnO/Si interface

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science (miscellaneous)

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