Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo; Jae Hyun Kwon; Jonghwa Eom; Joonyeon Chang; Suk Hee Han

doi:10.1016/j.jmmm.2007.12.001

Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

Original language	English
Pages (from-to)	1436-1439
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	320
Issue number	8
DOIs	https://doi.org/10.1016/j.jmmm.2007.12.001
Publication status	Published - 2008 Apr
Externally published	Yes

Keywords

Interface resistance
Spin transport
Two-dimensional electron gas

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2007.12.001

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title = "Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure",

abstract = "The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.",

keywords = "Interface resistance, Spin transport, Two-dimensional electron gas",

author = "Koo, {Hyun Cheol} and Kwon, {Jae Hyun} and Jonghwa Eom and Joonyeon Chang and Han, {Suk Hee}",

note = "Funding Information: This work was supported by the KIST Institutional Program.",

year = "2008",

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doi = "10.1016/j.jmmm.2007.12.001",

language = "English",

volume = "320",

pages = "1436--1439",

journal = "Journal of Magnetism and Magnetic Materials",

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T1 - Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

AU - Koo, Hyun Cheol

AU - Kwon, Jae Hyun

AU - Eom, Jonghwa

AU - Chang, Joonyeon

AU - Han, Suk Hee

N1 - Funding Information: This work was supported by the KIST Institutional Program.

PY - 2008/4

Y1 - 2008/4

N2 - The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

AB - The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

KW - Interface resistance

KW - Spin transport

KW - Two-dimensional electron gas

UR - http://www.scopus.com/inward/record.url?scp=39749123330&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2007.12.001

DO - 10.1016/j.jmmm.2007.12.001

M3 - Article

AN - SCOPUS:39749123330

VL - 320

SP - 1436

EP - 1439

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 8

ER -

Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Abstract

Keywords

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