Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo; Jae Hyun Kwon; Jonghwa Eom; Joonyeon Chang; Suk Hee Han

doi:10.1016/j.jmmm.2007.12.001

Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

Original language	English
Pages (from-to)	1436-1439
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	320
Issue number	8
DOIs	https://doi.org/10.1016/j.jmmm.2007.12.001
Publication status	Published - 2008 Apr 1
Externally published	Yes

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Keywords

Interface resistance
Spin transport
Two-dimensional electron gas

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Koo, H. C., Kwon, J. H., Eom, J., Chang, J., & Han, S. H. (2008). Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure. Journal of Magnetism and Magnetic Materials, 320(8), 1436-1439. https://doi.org/10.1016/j.jmmm.2007.12.001

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AU - Han, Suk Hee

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N2 - The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

AB - The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

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Access to Document

10.1016/j.jmmm.2007.12.001