Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

Original languageEnglish
Pages (from-to)1436-1439
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume320
Issue number8
DOIs
Publication statusPublished - 2008 Apr 1
Externally publishedYes

Fingerprint

Ferromagnetic materials
hybrid structures
Two dimensional electron gas
Semiconductor materials
Experiments
ferromagnetic materials
electron gas

Keywords

  • Interface resistance
  • Spin transport
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure. / Koo, Hyun Cheol; Kwon, Jae Hyun; Eom, Jonghwa; Chang, Joonyeon; Han, Suk Hee.

In: Journal of Magnetism and Magnetic Materials, Vol. 320, No. 8, 01.04.2008, p. 1436-1439.

Research output: Contribution to journalArticle

Koo, Hyun Cheol ; Kwon, Jae Hyun ; Eom, Jonghwa ; Chang, Joonyeon ; Han, Suk Hee. / Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure. In: Journal of Magnetism and Magnetic Materials. 2008 ; Vol. 320, No. 8. pp. 1436-1439.
@article{2518c6839d344ea9bac0a60e4115db7d,
title = "Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure",
abstract = "The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.",
keywords = "Interface resistance, Spin transport, Two-dimensional electron gas",
author = "Koo, {Hyun Cheol} and Kwon, {Jae Hyun} and Jonghwa Eom and Joonyeon Chang and Han, {Suk Hee}",
year = "2008",
month = "4",
day = "1",
doi = "10.1016/j.jmmm.2007.12.001",
language = "English",
volume = "320",
pages = "1436--1439",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "8",

}

TY - JOUR

T1 - Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

AU - Koo, Hyun Cheol

AU - Kwon, Jae Hyun

AU - Eom, Jonghwa

AU - Chang, Joonyeon

AU - Han, Suk Hee

PY - 2008/4/1

Y1 - 2008/4/1

N2 - The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

AB - The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

KW - Interface resistance

KW - Spin transport

KW - Two-dimensional electron gas

UR - http://www.scopus.com/inward/record.url?scp=39749123330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39749123330&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2007.12.001

DO - 10.1016/j.jmmm.2007.12.001

M3 - Article

VL - 320

SP - 1436

EP - 1439

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 8

ER -