Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5-250 Ω, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance.

Original languageEnglish
Pages (from-to)1436-1439
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume320
Issue number8
DOIs
Publication statusPublished - 2008 Apr
Externally publishedYes

Keywords

  • Interface resistance
  • Spin transport
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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