The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Feb 16|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)