Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

M. H. Cho; H. S. Chang; D. W. Moon; S. K. Kang; B. K. Min; D. H. Ko; H. S. Kim; Paul C. McIntyre; J. H. Lee; J. H. Ku; N. I. Lee

doi:10.1063/1.1647703

Interfacial characteristics of HfO ₂ films grown on strained Si _0.7Ge _0.3 by atomic-layer deposition

M. H. Cho, H. S. Chang, D. W. Moon, S. K. Kang, B. K. Min, D. H. Ko, H. S. Kim, Paul C. McIntyre, J. H. Lee, J. H. Ku, N. I. Lee

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50 Citations (Scopus)

Abstract

The effects of the interfacial characteristics of HfO ₂ dielectrics on strained Si _0.7Ge _0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO _x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO ₂ film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO _x decreased the accumulation capacitance and increased the oxide trap charge.

Original language	English
Pages (from-to)	1171-1173
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	7
DOIs	https://doi.org/10.1063/1.1647703
Publication status	Published - 2004 Feb 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition",

abstract = "The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.",

author = "Cho, {M. H.} and Chang, {H. S.} and Moon, {D. W.} and Kang, {S. K.} and Min, {B. K.} and Ko, {D. H.} and Kim, {H. S.} and McIntyre, {Paul C.} and Lee, {J. H.} and Ku, {J. H.} and Lee, {N. I.}",

year = "2004",

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doi = "10.1063/1.1647703",

language = "English",

volume = "84",

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TY - JOUR

T1 - Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

AU - Cho, M. H.

AU - Chang, H. S.

AU - Moon, D. W.

AU - Kang, S. K.

AU - Min, B. K.

AU - Ko, D. H.

AU - Kim, H. S.

AU - McIntyre, Paul C.

AU - Lee, J. H.

AU - Ku, J. H.

AU - Lee, N. I.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

AB - The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

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Interfacial characteristics of HfO ₂ films grown on strained Si _0.7Ge _0.3 by atomic-layer deposition

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