Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP InP distributed feedback laser diode structure

Dong Hoon Jang; Jeong Soo Kim; Kyung Hyun Park; Jung Kee Lee; Ho Sung Cho; Sahn Nahm; Seung Won Lee; Hong Man Kim; Chul Soon Park; Hyung Moo Park

doi:10.1016/0022-0248(95)00267-7

Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP InP distributed feedback laser diode structure

Dong Hoon Jang, Jeong Soo Kim, Kyung Hyun Park, Jung Kee Lee, Ho Sung Cho, Sahn Nahm, Seung Won Lee, Hong Man Kim, Chul Soon Park, Hyung Moo Park

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The interfacial layer formed during the soaking procedure of liquid phase epitaxy (LPE) growth and the heat-up procedure to the growth temperature of metalorganic vapor phase epitaxy (MOVPE) was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). A thin interfacial layer between an epitaxially grown GaInAsP layer and the concave region of the corrugated InP grating is formed in LPE growth using a GaAs cover crystal. The thickness of this interfacial InAsP layer in the concave region of corrugation is increased with increased AsH₃ partial pressure and heat-up time in MOVPE. The arsenic composition in the InAsP layer also increased with increased AsH₃ partial pressure. Dislocations and defects were not generated in LPE growth using a GaAs cover crystal and using an AsH₃ over pressure and heat-up procedure to the growth temperature in MOVPE.

Original language	English
Pages (from-to)	368-372
Number of pages	5
Journal	Journal of Crystal Growth
Volume	156
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(95)00267-7
Publication status	Published - 1995 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00267-7

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title = "Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP InP distributed feedback laser diode structure",

abstract = "The interfacial layer formed during the soaking procedure of liquid phase epitaxy (LPE) growth and the heat-up procedure to the growth temperature of metalorganic vapor phase epitaxy (MOVPE) was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). A thin interfacial layer between an epitaxially grown GaInAsP layer and the concave region of the corrugated InP grating is formed in LPE growth using a GaAs cover crystal. The thickness of this interfacial InAsP layer in the concave region of corrugation is increased with increased AsH3 partial pressure and heat-up time in MOVPE. The arsenic composition in the InAsP layer also increased with increased AsH3 partial pressure. Dislocations and defects were not generated in LPE growth using a GaAs cover crystal and using an AsH3 over pressure and heat-up procedure to the growth temperature in MOVPE.",

author = "Jang, {Dong Hoon} and Kim, {Jeong Soo} and Park, {Kyung Hyun} and Lee, {Jung Kee} and Cho, {Ho Sung} and Sahn Nahm and Lee, {Seung Won} and Kim, {Hong Man} and Park, {Chul Soon} and Park, {Hyung Moo}",

year = "1995",

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day = "1",

doi = "10.1016/0022-0248(95)00267-7",

language = "English",

volume = "156",

pages = "368--372",

journal = "Journal of Crystal Growth",

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T1 - Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP InP distributed feedback laser diode structure

AU - Jang, Dong Hoon

AU - Kim, Jeong Soo

AU - Park, Kyung Hyun

AU - Lee, Jung Kee

AU - Cho, Ho Sung

AU - Nahm, Sahn

AU - Lee, Seung Won

AU - Kim, Hong Man

AU - Park, Chul Soon

AU - Park, Hyung Moo

PY - 1995/12/1

Y1 - 1995/12/1

N2 - The interfacial layer formed during the soaking procedure of liquid phase epitaxy (LPE) growth and the heat-up procedure to the growth temperature of metalorganic vapor phase epitaxy (MOVPE) was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). A thin interfacial layer between an epitaxially grown GaInAsP layer and the concave region of the corrugated InP grating is formed in LPE growth using a GaAs cover crystal. The thickness of this interfacial InAsP layer in the concave region of corrugation is increased with increased AsH3 partial pressure and heat-up time in MOVPE. The arsenic composition in the InAsP layer also increased with increased AsH3 partial pressure. Dislocations and defects were not generated in LPE growth using a GaAs cover crystal and using an AsH3 over pressure and heat-up procedure to the growth temperature in MOVPE.

AB - The interfacial layer formed during the soaking procedure of liquid phase epitaxy (LPE) growth and the heat-up procedure to the growth temperature of metalorganic vapor phase epitaxy (MOVPE) was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). A thin interfacial layer between an epitaxially grown GaInAsP layer and the concave region of the corrugated InP grating is formed in LPE growth using a GaAs cover crystal. The thickness of this interfacial InAsP layer in the concave region of corrugation is increased with increased AsH3 partial pressure and heat-up time in MOVPE. The arsenic composition in the InAsP layer also increased with increased AsH3 partial pressure. Dislocations and defects were not generated in LPE growth using a GaAs cover crystal and using an AsH3 over pressure and heat-up procedure to the growth temperature in MOVPE.

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SN - 0022-0248

VL - 156

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EP - 372

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP InP distributed feedback laser diode structure

Abstract

ASJC Scopus subject areas

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