Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP InP distributed feedback laser diode structure

Dong Hoon Jang, Jeong Soo Kim, Kyung Hyun Park, Jung Kee Lee, Ho Sung Cho, Sahn Nahm, Seung Won Lee, Hong Man Kim, Chul Soon Park, Hyung Moo Park

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The interfacial layer formed during the soaking procedure of liquid phase epitaxy (LPE) growth and the heat-up procedure to the growth temperature of metalorganic vapor phase epitaxy (MOVPE) was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). A thin interfacial layer between an epitaxially grown GaInAsP layer and the concave region of the corrugated InP grating is formed in LPE growth using a GaAs cover crystal. The thickness of this interfacial InAsP layer in the concave region of corrugation is increased with increased AsH3 partial pressure and heat-up time in MOVPE. The arsenic composition in the InAsP layer also increased with increased AsH3 partial pressure. Dislocations and defects were not generated in LPE growth using a GaAs cover crystal and using an AsH3 over pressure and heat-up procedure to the growth temperature in MOVPE.

Original languageEnglish
Pages (from-to)368-372
Number of pages5
JournalJournal of Crystal Growth
Volume156
Issue number4
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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