Interfacial oxide growth and filling-up behaviour of the micro-gap in silicon fusion bonding processes

Byeong Kwon Ju, M. H. Oh, K. H. Tchah

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In the silicon fusion bonding (SFB) process, the influence of post-annealing atmospheres on the micro-gap existing at the Si-Si bonding interface was investigated with the observation of ultrasonic images, angle lap-stained junctions and cross section SEM morphologies. Additionally, the bonding strength and the electrical properties of diodes were compared after annealing processes at 100/dg fo 10 s to 10 h in wet O2, dry O2 and N2 atmospheres. Our results show that a significant saving of annealing time necessary to eliminate the non-contact micro-gap region having a width of ≤ 0.1 μm can be obtained if the hydrogenbonded wafer pair is pre-stabilized and post-annealed in wet O2 (95°C water bubbling) rather than in a dry O2 or N2 atmosphere. Based on the above result, we propose that the stabilizing and annealing step in highlt oxidizing atmosphere has an important role in the oxide filling-up phenomenon between wafer and wafer gap, in addition to the well-known mechanism of wafer plastic deformation at high temperature followed by solid-state diffusion of Si and O atoms.

Original languageEnglish
Pages (from-to)1168-1174
Number of pages7
JournalJournal of Materials Science
Volume28
Issue number5
DOIs
Publication statusPublished - 1993 Mar 1
Externally publishedYes

Fingerprint

Silicon
Oxides
Fusion reactions
fusion
wafers
Annealing
atmospheres
annealing
oxides
silicon
plastic deformation
Plastic deformation
Diodes
Electric properties
ultrasonics
Ultrasonics
diodes
electrical properties
solid state
Atoms

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)

Cite this

Interfacial oxide growth and filling-up behaviour of the micro-gap in silicon fusion bonding processes. / Ju, Byeong Kwon; Oh, M. H.; Tchah, K. H.

In: Journal of Materials Science, Vol. 28, No. 5, 01.03.1993, p. 1168-1174.

Research output: Contribution to journalArticle

@article{a5578173be224a28a7e47e8ae81a088c,
title = "Interfacial oxide growth and filling-up behaviour of the micro-gap in silicon fusion bonding processes",
abstract = "In the silicon fusion bonding (SFB) process, the influence of post-annealing atmospheres on the micro-gap existing at the Si-Si bonding interface was investigated with the observation of ultrasonic images, angle lap-stained junctions and cross section SEM morphologies. Additionally, the bonding strength and the electrical properties of diodes were compared after annealing processes at 100/dg fo 10 s to 10 h in wet O2, dry O2 and N2 atmospheres. Our results show that a significant saving of annealing time necessary to eliminate the non-contact micro-gap region having a width of ≤ 0.1 μm can be obtained if the hydrogenbonded wafer pair is pre-stabilized and post-annealed in wet O2 (95°C water bubbling) rather than in a dry O2 or N2 atmosphere. Based on the above result, we propose that the stabilizing and annealing step in highlt oxidizing atmosphere has an important role in the oxide filling-up phenomenon between wafer and wafer gap, in addition to the well-known mechanism of wafer plastic deformation at high temperature followed by solid-state diffusion of Si and O atoms.",
author = "Ju, {Byeong Kwon} and Oh, {M. H.} and Tchah, {K. H.}",
year = "1993",
month = "3",
day = "1",
doi = "10.1007/BF01191948",
language = "English",
volume = "28",
pages = "1168--1174",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "5",

}

TY - JOUR

T1 - Interfacial oxide growth and filling-up behaviour of the micro-gap in silicon fusion bonding processes

AU - Ju, Byeong Kwon

AU - Oh, M. H.

AU - Tchah, K. H.

PY - 1993/3/1

Y1 - 1993/3/1

N2 - In the silicon fusion bonding (SFB) process, the influence of post-annealing atmospheres on the micro-gap existing at the Si-Si bonding interface was investigated with the observation of ultrasonic images, angle lap-stained junctions and cross section SEM morphologies. Additionally, the bonding strength and the electrical properties of diodes were compared after annealing processes at 100/dg fo 10 s to 10 h in wet O2, dry O2 and N2 atmospheres. Our results show that a significant saving of annealing time necessary to eliminate the non-contact micro-gap region having a width of ≤ 0.1 μm can be obtained if the hydrogenbonded wafer pair is pre-stabilized and post-annealed in wet O2 (95°C water bubbling) rather than in a dry O2 or N2 atmosphere. Based on the above result, we propose that the stabilizing and annealing step in highlt oxidizing atmosphere has an important role in the oxide filling-up phenomenon between wafer and wafer gap, in addition to the well-known mechanism of wafer plastic deformation at high temperature followed by solid-state diffusion of Si and O atoms.

AB - In the silicon fusion bonding (SFB) process, the influence of post-annealing atmospheres on the micro-gap existing at the Si-Si bonding interface was investigated with the observation of ultrasonic images, angle lap-stained junctions and cross section SEM morphologies. Additionally, the bonding strength and the electrical properties of diodes were compared after annealing processes at 100/dg fo 10 s to 10 h in wet O2, dry O2 and N2 atmospheres. Our results show that a significant saving of annealing time necessary to eliminate the non-contact micro-gap region having a width of ≤ 0.1 μm can be obtained if the hydrogenbonded wafer pair is pre-stabilized and post-annealed in wet O2 (95°C water bubbling) rather than in a dry O2 or N2 atmosphere. Based on the above result, we propose that the stabilizing and annealing step in highlt oxidizing atmosphere has an important role in the oxide filling-up phenomenon between wafer and wafer gap, in addition to the well-known mechanism of wafer plastic deformation at high temperature followed by solid-state diffusion of Si and O atoms.

UR - http://www.scopus.com/inward/record.url?scp=0027558833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027558833&partnerID=8YFLogxK

U2 - 10.1007/BF01191948

DO - 10.1007/BF01191948

M3 - Article

VL - 28

SP - 1168

EP - 1174

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 5

ER -