Interfacial reaction depending on the stack structure of Al 2O3 and HfO2 during film growth and postannealing

M. H. Cho, K. B. Chung, H. S. Chang, D. W. Moon, S. A. Park, Y. K. Kim, K. Jeong, C. N. Whang, D. W. Lee, D. H. Ko, S. J. Doh, J. H. Lee, N. I. Lee

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

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Physics & Astronomy