Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN

Han Ki Kim, I. Adesida, Tae Yeon Seong

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11 Citations (Scopus)


The effect of interfacial reactions between a Pt(7 nm)/Pd(7 nm)/Au(15 nm) layer and p-GaN on the ohmic properties of the contact was investigated using Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), and glancing angle x-ray diffraction. The annealed Pt/Pd/Au contact exhibited linear-current voltage characteristics, which indicated that a high-quality ohmic contact was formed. The Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1 × 10 -5 ω cm 2 when annealed at 600°C for two minutes in flowing N 2 atmosphere. It was found that the diffusion of Pt and Pd into the GaN surface region plays an important role in forming a low resistance ohmic contact.

Original languageEnglish
Pages (from-to)1101-1104
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 2004 Jul 1
Externally publishedYes


ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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