The effect of interfacial reactions between a Pt(7 nm)/Pd(7 nm)/Au(15 nm) layer and p-GaN on the ohmic properties of the contact was investigated using Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), and glancing angle x-ray diffraction. The annealed Pt/Pd/Au contact exhibited linear-current voltage characteristics, which indicated that a high-quality ohmic contact was formed. The Pt/Pd/Au contact exhibited a specific contact resistivity of 3.1 × 10 -5 ω cm 2 when annealed at 600°C for two minutes in flowing N 2 atmosphere. It was found that the diffusion of Pt and Pd into the GaN surface region plays an important role in forming a low resistance ohmic contact.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2004 Jul 1|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)