Abstract
Glancing angle X-ray diffraction and Auger electron spectroscopy have been used to investigate interfacial reactions between the Ni(20 nm)/Pt(30 nm)/Au(80 nm) contacts and p-GaN (p = 9.4×1016 cm-3). The metallization schemes were annealed at temperatures ranging from 500 to 700 °C for 30 s in a flowing Ar atmosphere. The anneal of the sample at 500 °C resulted in ohmic behavior with a specific contact resistance of 2.1×10-2Ωcm2. However, the anneal at temperatures ≥600 °C led to the degradation of the ohmic property. It is shown that Ga-(Pt,Ni) phases such as Ga3Pt5 and Ga4Ni3 and a Pt-Ni solid solution are formed upon annealing at 500 °C, while in addition to the Ga4Ni3, new phases of GaAu2 and GaAu are formed upon annealing at temperatures ≥600 °C. As for the Pt-Ni solid solution, the lattice parameter decreases significantly with increasing annealing temperatures. A qualitative explanation is given to describe why the characteristic of the contacts changed from ohmic to rectifying behavior with increasing temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 3425-3428 |
| Number of pages | 4 |
| Journal | Journal of the Electrochemical Society |
| Volume | 146 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1999 Sep 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN. / Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.
In: Journal of the Electrochemical Society, Vol. 146, No. 9, 01.09.1999, p. 3425-3428.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN
AU - Jang, Ja Soon
AU - Park, Seong J.
AU - Seong, Tae Yeon
PY - 1999/9/1
Y1 - 1999/9/1
N2 - Glancing angle X-ray diffraction and Auger electron spectroscopy have been used to investigate interfacial reactions between the Ni(20 nm)/Pt(30 nm)/Au(80 nm) contacts and p-GaN (p = 9.4×1016 cm-3). The metallization schemes were annealed at temperatures ranging from 500 to 700 °C for 30 s in a flowing Ar atmosphere. The anneal of the sample at 500 °C resulted in ohmic behavior with a specific contact resistance of 2.1×10-2Ωcm2. However, the anneal at temperatures ≥600 °C led to the degradation of the ohmic property. It is shown that Ga-(Pt,Ni) phases such as Ga3Pt5 and Ga4Ni3 and a Pt-Ni solid solution are formed upon annealing at 500 °C, while in addition to the Ga4Ni3, new phases of GaAu2 and GaAu are formed upon annealing at temperatures ≥600 °C. As for the Pt-Ni solid solution, the lattice parameter decreases significantly with increasing annealing temperatures. A qualitative explanation is given to describe why the characteristic of the contacts changed from ohmic to rectifying behavior with increasing temperature.
AB - Glancing angle X-ray diffraction and Auger electron spectroscopy have been used to investigate interfacial reactions between the Ni(20 nm)/Pt(30 nm)/Au(80 nm) contacts and p-GaN (p = 9.4×1016 cm-3). The metallization schemes were annealed at temperatures ranging from 500 to 700 °C for 30 s in a flowing Ar atmosphere. The anneal of the sample at 500 °C resulted in ohmic behavior with a specific contact resistance of 2.1×10-2Ωcm2. However, the anneal at temperatures ≥600 °C led to the degradation of the ohmic property. It is shown that Ga-(Pt,Ni) phases such as Ga3Pt5 and Ga4Ni3 and a Pt-Ni solid solution are formed upon annealing at 500 °C, while in addition to the Ga4Ni3, new phases of GaAu2 and GaAu are formed upon annealing at temperatures ≥600 °C. As for the Pt-Ni solid solution, the lattice parameter decreases significantly with increasing annealing temperatures. A qualitative explanation is given to describe why the characteristic of the contacts changed from ohmic to rectifying behavior with increasing temperature.
UR - http://www.scopus.com/inward/record.url?scp=0033360547&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033360547&partnerID=8YFLogxK
U2 - 10.1149/1.1392490
DO - 10.1149/1.1392490
M3 - Article
AN - SCOPUS:0033360547
VL - 146
SP - 3425
EP - 3428
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 9
ER -