Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN

Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Glancing angle X-ray diffraction and Auger electron spectroscopy have been used to investigate interfacial reactions between the Ni(20 nm)/Pt(30 nm)/Au(80 nm) contacts and p-GaN (p = 9.4×1016 cm-3). The metallization schemes were annealed at temperatures ranging from 500 to 700 °C for 30 s in a flowing Ar atmosphere. The anneal of the sample at 500 °C resulted in ohmic behavior with a specific contact resistance of 2.1×10-2Ωcm2. However, the anneal at temperatures ≥600 °C led to the degradation of the ohmic property. It is shown that Ga-(Pt,Ni) phases such as Ga3Pt5 and Ga4Ni3 and a Pt-Ni solid solution are formed upon annealing at 500 °C, while in addition to the Ga4Ni3, new phases of GaAu2 and GaAu are formed upon annealing at temperatures ≥600 °C. As for the Pt-Ni solid solution, the lattice parameter decreases significantly with increasing annealing temperatures. A qualitative explanation is given to describe why the characteristic of the contacts changed from ohmic to rectifying behavior with increasing temperature.

Original languageEnglish
Pages (from-to)3425-3428
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number9
DOIs
Publication statusPublished - 1999 Sep 1
Externally publishedYes

Fingerprint

Surface chemistry
electric contacts
Annealing
annealing
Solid solutions
solid solutions
Temperature
temperature
Auger electron spectroscopy
Contact resistance
Metallizing
contact resistance
Auger spectroscopy
Lattice constants
electron spectroscopy
lattice parameters
degradation
atmospheres
X ray diffraction
Degradation

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN. / Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: Journal of the Electrochemical Society, Vol. 146, No. 9, 01.09.1999, p. 3425-3428.

Research output: Contribution to journalArticle

Jang, Ja Soon ; Park, Seong J. ; Seong, Tae Yeon. / Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN. In: Journal of the Electrochemical Society. 1999 ; Vol. 146, No. 9. pp. 3425-3428.
@article{c2af991b73384a848f8c8729c06f4f22,
title = "Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN",
abstract = "Glancing angle X-ray diffraction and Auger electron spectroscopy have been used to investigate interfacial reactions between the Ni(20 nm)/Pt(30 nm)/Au(80 nm) contacts and p-GaN (p = 9.4×1016 cm-3). The metallization schemes were annealed at temperatures ranging from 500 to 700 °C for 30 s in a flowing Ar atmosphere. The anneal of the sample at 500 °C resulted in ohmic behavior with a specific contact resistance of 2.1×10-2Ωcm2. However, the anneal at temperatures ≥600 °C led to the degradation of the ohmic property. It is shown that Ga-(Pt,Ni) phases such as Ga3Pt5 and Ga4Ni3 and a Pt-Ni solid solution are formed upon annealing at 500 °C, while in addition to the Ga4Ni3, new phases of GaAu2 and GaAu are formed upon annealing at temperatures ≥600 °C. As for the Pt-Ni solid solution, the lattice parameter decreases significantly with increasing annealing temperatures. A qualitative explanation is given to describe why the characteristic of the contacts changed from ohmic to rectifying behavior with increasing temperature.",
author = "Jang, {Ja Soon} and Park, {Seong J.} and Seong, {Tae Yeon}",
year = "1999",
month = "9",
day = "1",
doi = "10.1149/1.1392490",
language = "English",
volume = "146",
pages = "3425--3428",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - Interfacial reaction of Ni/Pt/Au contact schemes to p-type GaN

AU - Jang, Ja Soon

AU - Park, Seong J.

AU - Seong, Tae Yeon

PY - 1999/9/1

Y1 - 1999/9/1

N2 - Glancing angle X-ray diffraction and Auger electron spectroscopy have been used to investigate interfacial reactions between the Ni(20 nm)/Pt(30 nm)/Au(80 nm) contacts and p-GaN (p = 9.4×1016 cm-3). The metallization schemes were annealed at temperatures ranging from 500 to 700 °C for 30 s in a flowing Ar atmosphere. The anneal of the sample at 500 °C resulted in ohmic behavior with a specific contact resistance of 2.1×10-2Ωcm2. However, the anneal at temperatures ≥600 °C led to the degradation of the ohmic property. It is shown that Ga-(Pt,Ni) phases such as Ga3Pt5 and Ga4Ni3 and a Pt-Ni solid solution are formed upon annealing at 500 °C, while in addition to the Ga4Ni3, new phases of GaAu2 and GaAu are formed upon annealing at temperatures ≥600 °C. As for the Pt-Ni solid solution, the lattice parameter decreases significantly with increasing annealing temperatures. A qualitative explanation is given to describe why the characteristic of the contacts changed from ohmic to rectifying behavior with increasing temperature.

AB - Glancing angle X-ray diffraction and Auger electron spectroscopy have been used to investigate interfacial reactions between the Ni(20 nm)/Pt(30 nm)/Au(80 nm) contacts and p-GaN (p = 9.4×1016 cm-3). The metallization schemes were annealed at temperatures ranging from 500 to 700 °C for 30 s in a flowing Ar atmosphere. The anneal of the sample at 500 °C resulted in ohmic behavior with a specific contact resistance of 2.1×10-2Ωcm2. However, the anneal at temperatures ≥600 °C led to the degradation of the ohmic property. It is shown that Ga-(Pt,Ni) phases such as Ga3Pt5 and Ga4Ni3 and a Pt-Ni solid solution are formed upon annealing at 500 °C, while in addition to the Ga4Ni3, new phases of GaAu2 and GaAu are formed upon annealing at temperatures ≥600 °C. As for the Pt-Ni solid solution, the lattice parameter decreases significantly with increasing annealing temperatures. A qualitative explanation is given to describe why the characteristic of the contacts changed from ohmic to rectifying behavior with increasing temperature.

UR - http://www.scopus.com/inward/record.url?scp=0033360547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033360547&partnerID=8YFLogxK

U2 - 10.1149/1.1392490

DO - 10.1149/1.1392490

M3 - Article

VL - 146

SP - 3425

EP - 3428

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 9

ER -