Abstract
Among various factors that affect thermal degradation in spin valves (SV), Mn diffusion into pinned and Cu layers appears to be the most harmful to magnetoresistance (MR) and exchange coupling. The effects of CoNbZr (CNZ) film as underlayer and capping layer on thermal stability and Mn diffusion behavior were investigated at elevated temperatures in CNZ 2 nm (or Ta 5 nm)/CoFe/Cu/CoFe/IrMn/CNZ x nm (or Ta 5 nm) stacks. The normalized MR ratio and Hex with respect to annealing time were evaluated.
Original language | English |
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Title of host publication | INTERMAG Europe 2002 - IEEE International Magnetics Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 0780373650, 9780780373655 |
DOIs | |
Publication status | Published - 2002 |
Event | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2 |
Other
Other | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 |
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Country | Netherlands |
City | Amsterdam |
Period | 02/4/28 → 02/5/2 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Surfaces, Coatings and Films
Cite this
Interlayer diffusion and specularity aspects of amorphous CoNbZr based spin valves. / Cho, Ho Gun; Kim, Young-geun; Lee, Seong Rae.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc., 2002. 1001233.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Interlayer diffusion and specularity aspects of amorphous CoNbZr based spin valves
AU - Cho, Ho Gun
AU - Kim, Young-geun
AU - Lee, Seong Rae
PY - 2002
Y1 - 2002
N2 - Among various factors that affect thermal degradation in spin valves (SV), Mn diffusion into pinned and Cu layers appears to be the most harmful to magnetoresistance (MR) and exchange coupling. The effects of CoNbZr (CNZ) film as underlayer and capping layer on thermal stability and Mn diffusion behavior were investigated at elevated temperatures in CNZ 2 nm (or Ta 5 nm)/CoFe/Cu/CoFe/IrMn/CNZ x nm (or Ta 5 nm) stacks. The normalized MR ratio and Hex with respect to annealing time were evaluated.
AB - Among various factors that affect thermal degradation in spin valves (SV), Mn diffusion into pinned and Cu layers appears to be the most harmful to magnetoresistance (MR) and exchange coupling. The effects of CoNbZr (CNZ) film as underlayer and capping layer on thermal stability and Mn diffusion behavior were investigated at elevated temperatures in CNZ 2 nm (or Ta 5 nm)/CoFe/Cu/CoFe/IrMn/CNZ x nm (or Ta 5 nm) stacks. The normalized MR ratio and Hex with respect to annealing time were evaluated.
UR - http://www.scopus.com/inward/record.url?scp=85017203907&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85017203907&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2002.1001233
DO - 10.1109/INTMAG.2002.1001233
M3 - Conference contribution
AN - SCOPUS:85017203907
BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -