Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Kritsanu Tivakornsasithorn, Sangyeop Lee, Seul Ki Bac, Seonghoon Choi, Sang Hoon Lee, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journal › Article

Abstract

Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

Original languageEnglish
Article number8439082
JournalIEEE Transactions on Magnetics
Volume55
Issue number2
DOIs
Publication statusPublished - 2019 Feb 1

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Exchange coupling
Semiconductor materials
Magnetization reversal
Galvanomagnetic effects
Ferromagnetic materials
Hall effect
Magnetization
Temperature

Keywords

  • Ferromagnetic (fm) films
  • Interlayer exchange coupling (iec)
  • Magnetic anisotropy
  • Planar hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tivakornsasithorn, K., Lee, S., Bac, S. K., Choi, S., Lee, S. H., Liu, X., ... Furdyna, J. K. (2019). Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor. IEEE Transactions on Magnetics, 55(2), [8439082]. https://doi.org/10.1109/TMAG.2018.2859790

Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor. / Tivakornsasithorn, Kritsanu; Lee, Sangyeop; Bac, Seul Ki; Choi, Seonghoon; Lee, Sang Hoon; Liu, Xinyu; Dobrowolska, Margaret; Furdyna, Jacek K.

In: IEEE Transactions on Magnetics, Vol. 55, No. 2, 8439082, 01.02.2019.

Research output: Contribution to journal › Article

Tivakornsasithorn, K, Lee, S, Bac, SK, Choi, S, Lee, SH, Liu, X, Dobrowolska, M & Furdyna, JK 2019, 'Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor', IEEE Transactions on Magnetics, vol. 55, no. 2, 8439082. https://doi.org/10.1109/TMAG.2018.2859790
Tivakornsasithorn K, Lee S, Bac SK, Choi S, Lee SH, Liu X et al. Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor. IEEE Transactions on Magnetics. 2019 Feb 1;55(2). 8439082. https://doi.org/10.1109/TMAG.2018.2859790
Tivakornsasithorn, Kritsanu ; Lee, Sangyeop ; Bac, Seul Ki ; Choi, Seonghoon ; Lee, Sang Hoon ; Liu, Xinyu ; Dobrowolska, Margaret ; Furdyna, Jacek K. / Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor. In: IEEE Transactions on Magnetics. 2019 ; Vol. 55, No. 2.
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