Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor

Kritsanu Tivakornsasithorn, Sangyeop Lee, Seul Ki Bac, Seonghoon Choi, Sang Hoon Lee, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticle


Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.

Original languageEnglish
Article number8439082
JournalIEEE Transactions on Magnetics
Issue number2
Publication statusPublished - 2019 Feb 1


  • Ferromagnetic (fm) films
  • Interlayer exchange coupling (iec)
  • Magnetic anisotropy
  • Planar hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Tivakornsasithorn, K., Lee, S., Bac, S. K., Choi, S., Lee, S. H., Liu, X., Dobrowolska, M., & Furdyna, J. K. (2019). Interlayer exchange coupling between fe and gamnas ferromagnetic semiconductor. IEEE Transactions on Magnetics, 55(2), [8439082].