Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Phunvira Chongthanaphisut, Seul Ki Bac, Seonghoon Choi, Kyung Jae Lee, Jihoon Chang, Suho Choi, Sang Hoon Lee, Moses Nnaji, X. Liu, M. Dobrowolska, J. K. Furdyna

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Abstract

We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

Original languageEnglish
Article number4740
JournalScientific Reports
Volume9
Issue number1
DOIs
Publication statusPublished - 2019 Dec 1

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    Chongthanaphisut, P., Bac, S. K., Choi, S., Lee, K. J., Chang, J., Choi, S., Lee, S. H., Nnaji, M., Liu, X., Dobrowolska, M., & Furdyna, J. K. (2019). Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy. Scientific Reports, 9(1), [4740]. https://doi.org/10.1038/s41598-019-41138-9