Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems

Hakjoon Lee, Sangyeop Lee, Seonghoon Choi, Seul Ki Bac, Sanghoon Lee, Xiang Li, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Interlayer exchange coupling (IEC) of GaMnAs-based multilayers has been investigated by varying the structural parameters, such as spacer thickness, carrier doping in the nonmagnetic layers, and repetition number of GaMnAs/GaAs bilayers. The type of IEC in the structure (i.e., either ferromagnetic or antiferromagnetic IEC) was identified from the magnetotransport measurements, which show either anisotropic magnetoresistance or giant magnetoresistance-like behavior. The investigation revealed that the parameters of the ferromagnetic GaMnAs layer (i.e., Mn composition and thickness) are less important than those of the non-magnetic GaAs spacer layer in the structure. In particular, it was found that the presence of carriers in the spacer layer plays a crucial role in determining the type and strength of the IEC in GaMnAs-based multilayer systems.

Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalJournal of Crystal Growth
Volume477
DOIs
Publication statusPublished - 2017 Nov 1

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Semiconducting III–V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Lee, H., Lee, S., Choi, S., Bac, S. K., Lee, S., Li, X., Liu, X., Dobrowolska, M., & Furdyna, J. K. (2017). Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems. Journal of Crystal Growth, 477, 188-192. https://doi.org/10.1016/j.jcrysgro.2017.01.039