Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory

D. H. Lee, S. H. Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A commercial program package based on finite element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages612-613
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Finite element method calculation
  • Magnetic random access memo
  • Magnetic tunnel junctions
  • Magnetostatic interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • Cite this

    Lee, D. H., & Lim, S. H. (2006). Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 612-613). [4388928] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388928