Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory

D. H. Lee, Sang Ho Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A commercial program package based on finite element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages612-613
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Magnetostatics
Data storage equipment
Poles
Magnetic fields
Finite element method

Keywords

  • Finite element method calculation
  • Magnetic random access memo
  • Magnetic tunnel junctions
  • Magnetostatic interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Lee, D. H., & Lim, S. H. (2006). Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 612-613). [4388928] https://doi.org/10.1109/NMDC.2006.4388928

Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. / Lee, D. H.; Lim, Sang Ho.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 612-613 4388928.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, DH & Lim, SH 2006, Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388928, pp. 612-613, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388928
Lee DH, Lim SH. Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 612-613. 4388928 https://doi.org/10.1109/NMDC.2006.4388928
Lee, D. H. ; Lim, Sang Ho. / Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 612-613
@inproceedings{0beb31ec35bd44f9b2aa3b232fb067d7,
title = "Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory",
abstract = "A commercial program package based on finite element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.",
keywords = "Finite element method calculation, Magnetic random access memo, Magnetic tunnel junctions, Magnetostatic interactions",
author = "Lee, {D. H.} and Lim, {Sang Ho}",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/NMDC.2006.4388928",
language = "English",
isbn = "1424405408",
volume = "1",
pages = "612--613",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

}

TY - GEN

T1 - Interlayer magnetostatic fields in submicron cells for high density magnetic random access memory

AU - Lee, D. H.

AU - Lim, Sang Ho

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A commercial program package based on finite element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.

AB - A commercial program package based on finite element method (COMSOL) is used to calculate magnetic field intensity resulting from the free poles formed at the magnetic cell edges. The magnetic cell stack and dimensions are relevant to high density magnetic random access memory applications. The calculated field intensity is found to be large, indicating the importance of considering magnetostatic interactions in device applications.

KW - Finite element method calculation

KW - Magnetic random access memo

KW - Magnetic tunnel junctions

KW - Magnetostatic interactions

UR - http://www.scopus.com/inward/record.url?scp=50249099169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249099169&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388928

DO - 10.1109/NMDC.2006.4388928

M3 - Conference contribution

SN - 1424405408

SN - 9781424405404

VL - 1

SP - 612

EP - 613

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

ER -