Abstract
The growth behaviors of Ge overlayers and the intermixing between Ge and Si on Si(100)-(2×1) substrate were studied using scanning tunneling microscopy (STM) and medium energy ion scattering spectroscopy (MEIS). At the growth temperature of 350 °C, as Ge coverage increase, the Si surface peak in MEIS channeling decreases due to the shadowing of Ge atoms and can be fitted by a simple growth model with approximately 15% intermixing, an upper bound value, at a Ge coverage less than 4 ML. At Ge coverages between 4 and 8 ML, Si surface peak shows a broad enhancement, which can be explained with the growth of three-dimensional hut clusters at the expense of Ge wetting layers.
| Original language | English |
|---|---|
| Pages (from-to) | 1937-1940 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 18 |
| Issue number | 4 II |
| DOIs | |
| Publication status | Published - 2000 Jul 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
Cite this
Intermixing in Stranski-Krastanov germanium overlayer on Si(100). / Kahng, Se-Jong; Ha, Y. H.; Moon, D. W.; Kuk, Y.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 18, No. 4 II, 01.07.2000, p. 1937-1940.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Intermixing in Stranski-Krastanov germanium overlayer on Si(100)
AU - Kahng, Se-Jong
AU - Ha, Y. H.
AU - Moon, D. W.
AU - Kuk, Y.
PY - 2000/7/1
Y1 - 2000/7/1
N2 - The growth behaviors of Ge overlayers and the intermixing between Ge and Si on Si(100)-(2×1) substrate were studied using scanning tunneling microscopy (STM) and medium energy ion scattering spectroscopy (MEIS). At the growth temperature of 350 °C, as Ge coverage increase, the Si surface peak in MEIS channeling decreases due to the shadowing of Ge atoms and can be fitted by a simple growth model with approximately 15% intermixing, an upper bound value, at a Ge coverage less than 4 ML. At Ge coverages between 4 and 8 ML, Si surface peak shows a broad enhancement, which can be explained with the growth of three-dimensional hut clusters at the expense of Ge wetting layers.
AB - The growth behaviors of Ge overlayers and the intermixing between Ge and Si on Si(100)-(2×1) substrate were studied using scanning tunneling microscopy (STM) and medium energy ion scattering spectroscopy (MEIS). At the growth temperature of 350 °C, as Ge coverage increase, the Si surface peak in MEIS channeling decreases due to the shadowing of Ge atoms and can be fitted by a simple growth model with approximately 15% intermixing, an upper bound value, at a Ge coverage less than 4 ML. At Ge coverages between 4 and 8 ML, Si surface peak shows a broad enhancement, which can be explained with the growth of three-dimensional hut clusters at the expense of Ge wetting layers.
UR - http://www.scopus.com/inward/record.url?scp=0013052932&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0013052932&partnerID=8YFLogxK
U2 - 10.1116/1.582449
DO - 10.1116/1.582449
M3 - Article
AN - SCOPUS:0013052932
VL - 18
SP - 1937
EP - 1940
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 4 II
ER -