Intermixing in Stranski-Krastanov germanium overlayer on Si(100)

S. J. Kahng, Y. H. Ha, D. W. Moon, Y. Kuk

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The growth behaviors of Ge overlayers and the intermixing between Ge and Si on Si(100)-(2×1) substrate were studied using scanning tunneling microscopy (STM) and medium energy ion scattering spectroscopy (MEIS). At the growth temperature of 350 °C, as Ge coverage increase, the Si surface peak in MEIS channeling decreases due to the shadowing of Ge atoms and can be fitted by a simple growth model with approximately 15% intermixing, an upper bound value, at a Ge coverage less than 4 ML. At Ge coverages between 4 and 8 ML, Si surface peak shows a broad enhancement, which can be explained with the growth of three-dimensional hut clusters at the expense of Ge wetting layers.

Original languageEnglish
Pages (from-to)1937-1940
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number4 II
DOIs
Publication statusPublished - 2000 Jul 1
Event46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
Duration: 1999 Oct 251999 Oct 29

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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