Intermixing in Stranski-Krastanov germanium overlayer on Si(100)

Se-Jong Kahng, Y. H. Ha, D. W. Moon, Y. Kuk

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The growth behaviors of Ge overlayers and the intermixing between Ge and Si on Si(100)-(2×1) substrate were studied using scanning tunneling microscopy (STM) and medium energy ion scattering spectroscopy (MEIS). At the growth temperature of 350 °C, as Ge coverage increase, the Si surface peak in MEIS channeling decreases due to the shadowing of Ge atoms and can be fitted by a simple growth model with approximately 15% intermixing, an upper bound value, at a Ge coverage less than 4 ML. At Ge coverages between 4 and 8 ML, Si surface peak shows a broad enhancement, which can be explained with the growth of three-dimensional hut clusters at the expense of Ge wetting layers.

Original languageEnglish
Pages (from-to)1937-1940
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number4 II
DOIs
Publication statusPublished - 2000 Jul 1
Externally publishedYes

Fingerprint

Germanium
germanium
ion scattering
Spectroscopy
Scattering
Ions
Growth temperature
Scanning tunneling microscopy
Wetting
spectroscopy
wetting
scanning tunneling microscopy
Atoms
Substrates
energy
augmentation
atoms
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Intermixing in Stranski-Krastanov germanium overlayer on Si(100). / Kahng, Se-Jong; Ha, Y. H.; Moon, D. W.; Kuk, Y.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 18, No. 4 II, 01.07.2000, p. 1937-1940.

Research output: Contribution to journalArticle

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