Internal self-ordering in In(Sb,As), (In,Ga)Sb, and (Cd,Zn,Mn)Se nano-agglomerates/quantum dots

P. Möck, T. Topuria, N. D. Browning, G. R. Booker, N. J. Mason, R. J. Nicholas, M. Dobrowolska, S. Lee, J. K. Furdyna

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19 Citations (Scopus)


Nano-agglomerates of In(Sb,As) in InAs, (In,Ga)Sb in GaSb, and (Cd,Zn,Mn)Se in (Zn,Mn)Se are classified by transmission electron microscopy. In scanning transmission electron microscopy, atomic resolution Z-contrast images reveal different modes of internal compositional modulation on the atomic length scale, resulting for all three material systems in nano-agglomerates of an appropriate size that may constitute a new type of quantum dot. For other nano-agglomerates of In(Sb,As) in InAs and (In,Ga)Sb in GaSb, we observed a second type of nanoscale ordering that results in nano-agglomerates with an internal compositional modulation on a length scale of a few nm. Both types of compositional modulation are discussed as having arisen from a rather long-term structural response to a combination of internal and external strains.

Original languageEnglish
Pages (from-to)946-948
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2001 Aug 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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