TY - JOUR
T1 - Intramolecular Noncovalent Interaction-Enabled Dopant-Free Hole-Transporting Materials for High-Performance Inverted Perovskite Solar Cells
AU - Yang, Kun
AU - Liao, Qiaogan
AU - Huang, Jun
AU - Zhang, Zilong
AU - Su, Mengyao
AU - Chen, Zhicai
AU - Wu, Ziang
AU - Wang, Dong
AU - Lai, Ziwei
AU - Woo, Han Young
AU - Cao, Yan
AU - Gao, Peng
AU - Guo, Xugang
N1 - Funding Information:
This work was financially supported by the National Natural Science Foundation of China (Nos. 22005133 and 21774055) and the Shenzhen Science and Technology Innovation Commission (JCYJ20180504165709042). We also acknowledge the financial support of Guangdong Provincial Key Laboratory Program (2021B1212040001) from the Department of Science and Technology of Guangdong Province. The authors are also grateful for the technical support from SUSTech Core Research Facilities and the Computational Science and Engineering of Southern University of Science and Technology.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2022/1/10
Y1 - 2022/1/10
N2 - Intramolecular noncovalent interactions (INIs) have served as a powerful strategy for accessing organic semiconductors with enhanced charge transport properties. Herein, we apply the INI strategy for developing dopant-free hole-transporting materials (HTMs) by constructing two small-molecular HTMs featuring an INI-integrated backbone for high-performance perovskite solar cells (PVSCs). Upon incorporating noncovalent S⋅⋅⋅O interaction into their simple-structured backbones, the resulting HTMs, BTORA and BTORCNA, showed self-planarized backbones, tuned energy levels, enhanced thermal properties, appropriate film morphology, and effective defect passivation. More importantly, the high film crystallinity enables the materials with substantial hole mobilities, thus rendering them as promising dopant-free HTMs. Consequently, the BTORCNA-based inverted PVSCs delivered a power conversion efficiency of 21.10 % with encouraging long-term device stability, outperforming the devices based on BTRA without S⋅⋅⋅O interaction (18.40 %). This work offers a practical approach to designing charge transporting layers with high intrinsic mobilities for high-performance PVSCs.
AB - Intramolecular noncovalent interactions (INIs) have served as a powerful strategy for accessing organic semiconductors with enhanced charge transport properties. Herein, we apply the INI strategy for developing dopant-free hole-transporting materials (HTMs) by constructing two small-molecular HTMs featuring an INI-integrated backbone for high-performance perovskite solar cells (PVSCs). Upon incorporating noncovalent S⋅⋅⋅O interaction into their simple-structured backbones, the resulting HTMs, BTORA and BTORCNA, showed self-planarized backbones, tuned energy levels, enhanced thermal properties, appropriate film morphology, and effective defect passivation. More importantly, the high film crystallinity enables the materials with substantial hole mobilities, thus rendering them as promising dopant-free HTMs. Consequently, the BTORCNA-based inverted PVSCs delivered a power conversion efficiency of 21.10 % with encouraging long-term device stability, outperforming the devices based on BTRA without S⋅⋅⋅O interaction (18.40 %). This work offers a practical approach to designing charge transporting layers with high intrinsic mobilities for high-performance PVSCs.
UR - http://www.scopus.com/inward/record.url?scp=85120417985&partnerID=8YFLogxK
U2 - 10.1002/anie.202113749
DO - 10.1002/anie.202113749
M3 - Article
C2 - 34783150
AN - SCOPUS:85120417985
VL - 61
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
SN - 1433-7851
IS - 2
M1 - e202113749
ER -