Inversion behavior in Sc2O3/GaN gated diodes

Ji Hyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.

Original languageEnglish
Pages (from-to)373-375
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number2
DOIs
Publication statusPublished - 2002 Jul 8
Externally publishedYes

Fingerprint

diodes
inversions
capacitance
capacitance-voltage characteristics
hooks
frequency measurement
electric potential
charging
activation
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J. H., Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., ... Irokawa, Y. (2002). Inversion behavior in Sc2O3/GaN gated diodes. Applied Physics Letters, 81(2), 373-375. https://doi.org/10.1063/1.1492852

Inversion behavior in Sc2O3/GaN gated diodes. / Kim, Ji Hyun; Mehandru, R.; Luo, B.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Irokawa, Y.

In: Applied Physics Letters, Vol. 81, No. 2, 08.07.2002, p. 373-375.

Research output: Contribution to journalArticle

Kim, JH, Mehandru, R, Luo, B, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ & Irokawa, Y 2002, 'Inversion behavior in Sc2O3/GaN gated diodes', Applied Physics Letters, vol. 81, no. 2, pp. 373-375. https://doi.org/10.1063/1.1492852
Kim JH, Mehandru R, Luo B, Ren F, Gila BP, Onstine AH et al. Inversion behavior in Sc2O3/GaN gated diodes. Applied Physics Letters. 2002 Jul 8;81(2):373-375. https://doi.org/10.1063/1.1492852
Kim, Ji Hyun ; Mehandru, R. ; Luo, B. ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Irokawa, Y. / Inversion behavior in Sc2O3/GaN gated diodes. In: Applied Physics Letters. 2002 ; Vol. 81, No. 2. pp. 373-375.
@article{a21fbe6eea0d4c53a664fe3d44feb43e,
title = "Inversion behavior in Sc2O3/GaN gated diodes",
abstract = "The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.",
author = "Kim, {Ji Hyun} and R. Mehandru and B. Luo and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and Y. Irokawa",
year = "2002",
month = "7",
day = "8",
doi = "10.1063/1.1492852",
language = "English",
volume = "81",
pages = "373--375",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Inversion behavior in Sc2O3/GaN gated diodes

AU - Kim, Ji Hyun

AU - Mehandru, R.

AU - Luo, B.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Irokawa, Y.

PY - 2002/7/8

Y1 - 2002/7/8

N2 - The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.

AB - The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.

UR - http://www.scopus.com/inward/record.url?scp=79956037844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956037844&partnerID=8YFLogxK

U2 - 10.1063/1.1492852

DO - 10.1063/1.1492852

M3 - Article

VL - 81

SP - 373

EP - 375

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -