Inversion behavior in Sc2O3/GaN gated diodes

Ji Hyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa

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Abstract

The capacitance-voltage (C-V) characteristics of Sc2O 3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the drain-voltage dependence of the C-V curves, the total surface state density was estimated to be ∼8.2×10 12cm-2 for diodes undergoing an implant activation anneal at 950°C. The accumulation capacitance showed a significant dependence on measurement frequency and is suggested to result from the presence of an interfacial dielectric between the Sc2O3 and GaN. The Si-implanted n+ regions in the gated diode structure are effective in providing a source of inversion charge.

Original languageEnglish
Pages (from-to)373-375
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number2
DOIs
Publication statusPublished - 2002 Jul 8
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J. H., Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., & Irokawa, Y. (2002). Inversion behavior in Sc2O3/GaN gated diodes. Applied Physics Letters, 81(2), 373-375. https://doi.org/10.1063/1.1492852