Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer

C. Fowley, B. S. Chun, H. C. Wu, M. Abid, J. U. Cho, S. J. Noh, Young-geun Kim, I. V. Shvets, J. M D Coey

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Abstract

We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic interlayer exchange coupling (IEC). The inverted GMR is observed for the thickness of Ru providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as well as the electrical separation of the overall structure into two SVs connected in parallel.

Original languageEnglish
Article number222506
JournalApplied Physics Letters
Volume95
Issue number22
DOIs
Publication statusPublished - 2009 Dec 18

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fowley, C., Chun, B. S., Wu, H. C., Abid, M., Cho, J. U., Noh, S. J., Kim, Y., Shvets, I. V., & Coey, J. M. D. (2009). Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer. Applied Physics Letters, 95(22), [222506]. https://doi.org/10.1063/1.3266522