TY - JOUR
T1 - Inverted Organic Solar Cells Fabricated with Room-Temperature-deposited Transparent Multilayer Electrodes
AU - Kim, Jun Ho
AU - Kwon, Sung Nam
AU - Na, Seok In
AU - Yoo, Young Zo
AU - Seong, Tae Yeon
PY - 2017/8/1
Y1 - 2017/8/1
N2 - We investigated the electrical, optical, and structural properties of Al-doped ZnO (AZO)/Ag/AZO and indium gallium zinc oxide (IGZO)/Ag/IGZO multilayer films, and the performance of inverted organic solar cells (OSCs) fabricated with Sn-doped indium oxide (ITO), AZO/Ag/AZO, and IGZO/Ag/IGZO electrodes. Even though deposited at room temperature, AZO/Ag/AZO (36 nm/19 nm/36 nm) and IGZO/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films showed sheet resistances of 4.1 and 4.2 Ω/sq, resistivities of 3.3 × 10−5 and 4.1 × 10−5 Ω cm, and transmittances of 93 and 88% at 550 nm, respectively. Figures of merit (FOMs) were obtained to be 99.9 and 49.9 × 10−3 Ω−1 for the AZO/Ag/AZO and IGZO/Ag/IGZO films, respectively. Inverted OSCs fabricated using the as-deposited AZO/Ag/AZO and IGZO/Ag/IGZO electrodes produced power conversion efficiencies (PCEs) of 2.4 and 2.6%, respectively, while that with high-temperature annealed ITO electrode gave a PCE of 3.2%.
AB - We investigated the electrical, optical, and structural properties of Al-doped ZnO (AZO)/Ag/AZO and indium gallium zinc oxide (IGZO)/Ag/IGZO multilayer films, and the performance of inverted organic solar cells (OSCs) fabricated with Sn-doped indium oxide (ITO), AZO/Ag/AZO, and IGZO/Ag/IGZO electrodes. Even though deposited at room temperature, AZO/Ag/AZO (36 nm/19 nm/36 nm) and IGZO/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films showed sheet resistances of 4.1 and 4.2 Ω/sq, resistivities of 3.3 × 10−5 and 4.1 × 10−5 Ω cm, and transmittances of 93 and 88% at 550 nm, respectively. Figures of merit (FOMs) were obtained to be 99.9 and 49.9 × 10−3 Ω−1 for the AZO/Ag/AZO and IGZO/Ag/IGZO films, respectively. Inverted OSCs fabricated using the as-deposited AZO/Ag/AZO and IGZO/Ag/IGZO electrodes produced power conversion efficiencies (PCEs) of 2.4 and 2.6%, respectively, while that with high-temperature annealed ITO electrode gave a PCE of 3.2%.
KW - Al-doped ZnO
KW - Indium gallium zinc oxide
KW - Inverted organic solar cells
KW - Oxide/metal/oxide
KW - Transparent electrodes
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U2 - 10.1002/bkcs.11183
DO - 10.1002/bkcs.11183
M3 - Article
AN - SCOPUS:85027575848
SN - 0253-2964
VL - 38
SP - 856
EP - 860
JO - Bulletin of the Korean Chemical Society
JF - Bulletin of the Korean Chemical Society
IS - 8
ER -