Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistors

Young Soo Park, Doohyeok Lim, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we propose inverting logic-in-memory (LIM) cells comprising silicon nanowire feedback field-effect transistors with steep switching and holding characteristics. The timing diagrams of the proposed inverting LIM cells under dynamic and static conditions are investigated via mixed-mode technology computer-aided design simulation to verify the performance. The inverting LIM cells have an operating speed of the order of nanoseconds, an ultra-high voltage gain, and a longer retention time than that of conventional dynamic random access memory. The disturbance characteristics of half-selected cells within an inverting LIM array confirm the appropriate functioning of the random access memory array.

Original languageEnglish
Article number225202
JournalNanotechnology
Volume32
Issue number22
DOIs
Publication statusPublished - 2021 May 28

Keywords

  • feedback field-effect transistors
  • logicin-memory
  • memory hierarchy
  • mixed-mode simulation
  • silicon nanowire
  • switchable memory device

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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