Abstract
The effects of a thermal annealing process on the dc performance of off-state, drain-voltage step-stressed AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. After stress, the reverse bias gate leakage current increased from 7 × 10-3 to 1.96 × 10-1mA/mm and drain current on-off ratio decreased from 1.9 × 105 to 4.52 × 103. These degradations were completely recovered after a thermal annealing at 450 °C for 10 min. Temperature-dependent drain-current subthreshold swing measurements were employed to estimate the trap densities located in the AlGaN barrier layer near-surface region of the HEMTs before and after off-state drain-voltage step-stressing and also following subsequent thermal annealing. Off-state step-stressing produced a significant increase of trap density from 2.15 × 1012 to 1.63 × 1013/cm2 V. This was reduced to 5.21 × 1012/cm2 V after thermal annealing. These results show that simple thermal annealing can recover much of the degradation caused by step-stressing below the threshold for permanent damage.
| Original language | English |
|---|---|
| Article number | 031204 |
| Journal | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics |
| Volume | 33 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 May 1 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Process Chemistry and Technology
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Materials Chemistry
- Instrumentation
Cite this
Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors. / Kim, Byung Jae; Ahn, Shihyun; Hwang, Ya Hsi; Ren, Fan; Pearton, Stephen J.; Kim, Ji Hyun; Zhang, Ming Lan.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 3, 031204, 01.05.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors
AU - Kim, Byung Jae
AU - Ahn, Shihyun
AU - Hwang, Ya Hsi
AU - Ren, Fan
AU - Pearton, Stephen J.
AU - Kim, Ji Hyun
AU - Zhang, Ming Lan
PY - 2015/5/1
Y1 - 2015/5/1
N2 - The effects of a thermal annealing process on the dc performance of off-state, drain-voltage step-stressed AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. After stress, the reverse bias gate leakage current increased from 7 × 10-3 to 1.96 × 10-1mA/mm and drain current on-off ratio decreased from 1.9 × 105 to 4.52 × 103. These degradations were completely recovered after a thermal annealing at 450 °C for 10 min. Temperature-dependent drain-current subthreshold swing measurements were employed to estimate the trap densities located in the AlGaN barrier layer near-surface region of the HEMTs before and after off-state drain-voltage step-stressing and also following subsequent thermal annealing. Off-state step-stressing produced a significant increase of trap density from 2.15 × 1012 to 1.63 × 1013/cm2 V. This was reduced to 5.21 × 1012/cm2 V after thermal annealing. These results show that simple thermal annealing can recover much of the degradation caused by step-stressing below the threshold for permanent damage.
AB - The effects of a thermal annealing process on the dc performance of off-state, drain-voltage step-stressed AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. After stress, the reverse bias gate leakage current increased from 7 × 10-3 to 1.96 × 10-1mA/mm and drain current on-off ratio decreased from 1.9 × 105 to 4.52 × 103. These degradations were completely recovered after a thermal annealing at 450 °C for 10 min. Temperature-dependent drain-current subthreshold swing measurements were employed to estimate the trap densities located in the AlGaN barrier layer near-surface region of the HEMTs before and after off-state drain-voltage step-stressing and also following subsequent thermal annealing. Off-state step-stressing produced a significant increase of trap density from 2.15 × 1012 to 1.63 × 1013/cm2 V. This was reduced to 5.21 × 1012/cm2 V after thermal annealing. These results show that simple thermal annealing can recover much of the degradation caused by step-stressing below the threshold for permanent damage.
UR - http://www.scopus.com/inward/record.url?scp=84926457706&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84926457706&partnerID=8YFLogxK
U2 - 10.1116/1.4916882
DO - 10.1116/1.4916882
M3 - Article
VL - 33
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SN - 2166-2746
IS - 3
M1 - 031204
ER -