Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors

Byung Jae Kim, Shihyun Ahn, Ya Hsi Hwang, Fan Ren, Stephen J. Pearton, Ji Hyun Kim, Ming Lan Zhang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of a thermal annealing process on the dc performance of off-state, drain-voltage step-stressed AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. After stress, the reverse bias gate leakage current increased from 7 × 10-3 to 1.96 × 10-1mA/mm and drain current on-off ratio decreased from 1.9 × 105 to 4.52 × 103. These degradations were completely recovered after a thermal annealing at 450 °C for 10 min. Temperature-dependent drain-current subthreshold swing measurements were employed to estimate the trap densities located in the AlGaN barrier layer near-surface region of the HEMTs before and after off-state drain-voltage step-stressing and also following subsequent thermal annealing. Off-state step-stressing produced a significant increase of trap density from 2.15 × 1012 to 1.63 × 1013/cm2 V. This was reduced to 5.21 × 1012/cm2 V after thermal annealing. These results show that simple thermal annealing can recover much of the degradation caused by step-stressing below the threshold for permanent damage.

Original languageEnglish
Article number031204
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume33
Issue number3
DOIs
Publication statusPublished - 2015 May 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Annealing
annealing
Electric potential
electric potential
Drain current
traps
degradation
Degradation
barrier layers
Leakage currents
leakage
Hot Temperature
aluminum gallium nitride
damage
thresholds
estimates
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors. / Kim, Byung Jae; Ahn, Shihyun; Hwang, Ya Hsi; Ren, Fan; Pearton, Stephen J.; Kim, Ji Hyun; Zhang, Ming Lan.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 3, 031204, 01.05.2015.

Research output: Contribution to journalArticle

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