Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

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Abstract

Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.

Original languageEnglish
Article number231101
JournalApplied Physics Letters
Volume108
Issue number23
DOIs
Publication statusPublished - 2016 Jun 6

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light emitting diodes
quantum wells
current density
electric potential
electrons
energy conversion
profiles
temperature profiles
depletion
leakage
injection
shift
cross sections

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{d82dfc6928ee4328a3541185c96439f4,
title = "Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode",
abstract = "Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.",
author = "Taewoong Kim and Seong, {Tae Yeon} and Kwon, {Oh Myoung}",
year = "2016",
month = "6",
day = "6",
doi = "10.1063/1.4953401",
language = "English",
volume = "108",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

AU - Kim, Taewoong

AU - Seong, Tae Yeon

AU - Kwon, Oh Myoung

PY - 2016/6/6

Y1 - 2016/6/6

N2 - Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.

AB - Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.

UR - http://www.scopus.com/inward/record.url?scp=84974653228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84974653228&partnerID=8YFLogxK

U2 - 10.1063/1.4953401

DO - 10.1063/1.4953401

M3 - Article

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231101

ER -