Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes

Doo Hyeb Youn, Sung Jin Son, Young Ju Lee, Soon Won Hwang, Jung Ja Yang, Kang Jae Lee, Jong Hi Kim, Jang Yeon Jo, Ji Beom Yoo, Chul Jong Choi, Tae Yeon Seong

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6 Citations (Scopus)

Abstract

The role of two-step low-temperature GaN (LT-GaN) layers was investigated by cathodoluminescence, high resolution double crystal X-ray diffraction, transmission electron microscopy, atomic force microscopy, and current-voltage measurements. It was shown that the introduction of the LT-GaN layer prevents In from evaporating from InGaN during the high-temperature growth of p-GaN. The trasmission electron microscopic (TEM) results showed that the LT-GaN hampers dislocation propagation from the InGaN active layer into the p-GaN, leading to reduction in the dislocation density in the p-GaN. The use of the two-step LT-GaN resulted in an increase in the output power of light-emitting diodes and a decrease in the operating forward voltage.

Original languageEnglish
Pages (from-to)2512-2515
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number5 A
Publication statusPublished - 2000 May 1
Externally publishedYes

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Keywords

  • Cathodoluminescence
  • Defects
  • GaN
  • InGaN
  • Low-temperature GaN
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Youn, D. H., Son, S. J., Lee, Y. J., Hwang, S. W., Yang, J. J., Lee, K. J., Kim, J. H., Jo, J. Y., Yoo, J. B., Choi, C. J., & Seong, T. Y. (2000). Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(5 A), 2512-2515.