Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Yujin Seo, Choong Ki Kim, Tae In Lee, Wan Sik Hwang, Hyun-Yong Yu, Yang Kyu Choi, Byung Jin Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

Original languageEnglish
Article number8019845
Pages (from-to)3998-4001
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume64
Issue number10
DOIs
Publication statusPublished - 2017 Oct 1

Keywords

  • Aluminum oxynitride (AlON)
  • border trap
  • germanium
  • germanium oxide (GeO)
  • low-frequency noise (LFN)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Seo, Y., Kim, C. K., Lee, T. I., Hwang, W. S., Yu, H-Y., Choi, Y. K., & Cho, B. J. (2017). Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks. IEEE Transactions on Electron Devices, 64(10), 3998-4001. [8019845]. https://doi.org/10.1109/TED.2017.2741496