Abstract
Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.
| Original language | English |
|---|---|
| Article number | 8019845 |
| Pages (from-to) | 3998-4001 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 64 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2017 Oct 1 |
Fingerprint
Keywords
- Aluminum oxynitride (AlON)
- border trap
- germanium
- germanium oxide (GeO)
- low-frequency noise (LFN)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks. / Seo, Yujin; Kim, Choong Ki; Lee, Tae In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang Kyu; Cho, Byung Jin.
In: IEEE Transactions on Electron Devices, Vol. 64, No. 10, 8019845, 01.10.2017, p. 3998-4001.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks
AU - Seo, Yujin
AU - Kim, Choong Ki
AU - Lee, Tae In
AU - Hwang, Wan Sik
AU - Yu, Hyun-Yong
AU - Choi, Yang Kyu
AU - Cho, Byung Jin
PY - 2017/10/1
Y1 - 2017/10/1
N2 - Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.
AB - Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.
KW - Aluminum oxynitride (AlON)
KW - border trap
KW - germanium
KW - germanium oxide (GeO)
KW - low-frequency noise (LFN)
UR - http://www.scopus.com/inward/record.url?scp=85028708902&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85028708902&partnerID=8YFLogxK
U2 - 10.1109/TED.2017.2741496
DO - 10.1109/TED.2017.2741496
M3 - Article
AN - SCOPUS:85028708902
VL - 64
SP - 3998
EP - 4001
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
M1 - 8019845
ER -