Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Yujin Seo; Choong Ki Kim; Tae In Lee; Wan Sik Hwang; Hyun-Yong Yu; Yang Kyu Choi; Byung Jin Cho

doi:10.1109/TED.2017.2741496

Investigation of Border Trap Characteristics in the AlON/GeO₂/Ge Gate Stacks

Yujin Seo, Choong Ki Kim, Tae In Lee, Wan Sik Hwang, Hyun-Yong Yu, Yang Kyu Choi, Byung Jin Cho

School of Electrical Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO₂/Ge gate-stack are discussed in detail and compared with those in the Al₂O₃/GeO₂/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al₂O₃ in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al₂O₃ gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

Original language	English
Article number	8019845
Pages (from-to)	3998-4001
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TED.2017.2741496
Publication status	Published - 2017 Oct 1

Keywords

Aluminum oxynitride (AlON)
border trap
germanium
germanium oxide (GeO)
low-frequency noise (LFN)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Seo, Y., Kim, C. K., Lee, T. I., Hwang, W. S., Yu, H-Y., Choi, Y. K., & Cho, B. J. (2017). Investigation of Border Trap Characteristics in the AlON/GeO₂/Ge Gate Stacks. IEEE Transactions on Electron Devices, 64(10), 3998-4001. [8019845]. https://doi.org/10.1109/TED.2017.2741496

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abstract = "Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.",

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AU - Seo, Yujin

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AU - Lee, Tae In

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AU - Yu, Hyun-Yong

AU - Choi, Yang Kyu

AU - Cho, Byung Jin

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AB - Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

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KW - low-frequency noise (LFN)

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