Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Yujin Seo; Choong Ki Kim; Tae In Lee; Wan Sik Hwang; Hyun Yong Yu; Yang Kyu Choi; Byung Jin Cho

doi:10.1109/TED.2017.2741496

Investigation of Border Trap Characteristics in the AlON/GeO₂/Ge Gate Stacks

Yujin Seo, Choong Ki Kim, Tae In Lee, Wan Sik Hwang, Hyun Yong Yu, Yang Kyu Choi, Byung Jin Cho

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO₂/Ge gate-stack are discussed in detail and compared with those in the Al₂O₃/GeO₂/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al₂O₃ in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al₂O₃ gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

Original language	English
Article number	8019845
Pages (from-to)	3998-4001
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TED.2017.2741496
Publication status	Published - 2017 Oct

Keywords

Aluminum oxynitride (AlON)
border trap
germanium
germanium oxide (GeO)
low-frequency noise (LFN)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2017.2741496

Cite this

@article{6aade60692964a04be71e8cae821395d,

title = "Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks",

abstract = "Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.",

keywords = "Aluminum oxynitride (AlON), border trap, germanium, germanium oxide (GeO), low-frequency noise (LFN)",

author = "Yujin Seo and Kim, {Choong Ki} and Lee, {Tae In} and Hwang, {Wan Sik} and Yu, {Hyun Yong} and Choi, {Yang Kyu} and Cho, {Byung Jin}",

note = "Funding Information: Manuscript received April 27, 2017; revised July 14, 2017; accepted August 14, 2017. Date of publication August 29, 2017; date of current version September 20, 2017. This work was supported by the Industrial Strategic Technology Development Program (Technology Development of Ge nMOS/pMOS FinFET for 10 nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI, Korea) under Grant 10048594. The review of this paper was arranged by Editor D. Esseni. (Corresponding author: Byung Jin Cho.) Y. Seo, C.-K. Kim, T.-I. Lee, Y.-K. Choi, and B. J. Cho are with the School of Electrical Engineering, KAIST, Daejeon 305-701, South Korea (e-mail: bjcho@kaist.edu).",

year = "2017",

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T1 - Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

AU - Seo, Yujin

AU - Kim, Choong Ki

AU - Lee, Tae In

AU - Hwang, Wan Sik

AU - Yu, Hyun Yong

AU - Choi, Yang Kyu

AU - Cho, Byung Jin

N1 - Funding Information: Manuscript received April 27, 2017; revised July 14, 2017; accepted August 14, 2017. Date of publication August 29, 2017; date of current version September 20, 2017. This work was supported by the Industrial Strategic Technology Development Program (Technology Development of Ge nMOS/pMOS FinFET for 10 nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI, Korea) under Grant 10048594. The review of this paper was arranged by Editor D. Esseni. (Corresponding author: Byung Jin Cho.) Y. Seo, C.-K. Kim, T.-I. Lee, Y.-K. Choi, and B. J. Cho are with the School of Electrical Engineering, KAIST, Daejeon 305-701, South Korea (e-mail: bjcho@kaist.edu).

PY - 2017/10

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N2 - Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

AB - Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

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KW - low-frequency noise (LFN)

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