Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Yujin Seo, Choong Ki Kim, Tae In Lee, Wan Sik Hwang, Hyun-Yong Yu, Yang Kyu Choi, Byung Jin Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-Trapping and low-frequency noise analyses.

Original languageEnglish
Article number8019845
Pages (from-to)3998-4001
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume64
Issue number10
DOIs
Publication statusPublished - 2017 Oct 1

Fingerprint

Aluminum
Germanium oxides
Charge trapping
Desorption
aluminum oxynitride
germanium oxide

Keywords

  • Aluminum oxynitride (AlON)
  • border trap
  • germanium
  • germanium oxide (GeO)
  • low-frequency noise (LFN)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Seo, Y., Kim, C. K., Lee, T. I., Hwang, W. S., Yu, H-Y., Choi, Y. K., & Cho, B. J. (2017). Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks. IEEE Transactions on Electron Devices, 64(10), 3998-4001. [8019845]. https://doi.org/10.1109/TED.2017.2741496

Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks. / Seo, Yujin; Kim, Choong Ki; Lee, Tae In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang Kyu; Cho, Byung Jin.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 10, 8019845, 01.10.2017, p. 3998-4001.

Research output: Contribution to journalArticle

Seo, Y, Kim, CK, Lee, TI, Hwang, WS, Yu, H-Y, Choi, YK & Cho, BJ 2017, 'Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks', IEEE Transactions on Electron Devices, vol. 64, no. 10, 8019845, pp. 3998-4001. https://doi.org/10.1109/TED.2017.2741496
Seo, Yujin ; Kim, Choong Ki ; Lee, Tae In ; Hwang, Wan Sik ; Yu, Hyun-Yong ; Choi, Yang Kyu ; Cho, Byung Jin. / Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 10. pp. 3998-4001.
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