Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density

Soohwan Jang; Hyonwoong Kim; Doo Soo Kim; Sung Min Hwang; Jihyun Kim; Kwang Hyeon Baik

doi:10.1063/1.4825171

Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density

Soohwan Jang, Hyonwoong Kim, Doo Soo Kim, Sung Min Hwang, Jihyun Kim, Kwang Hyeon Baik

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report on the anisotropic carrier transport properties of semipolar (11 2 ̄ 2) GaN films with low defect density. We utilized the asymmetric lateral epitaxy to obtain various semipolar (11 2 ̄ 2) GaN films having significantly reduced partial dislocations and basal-plane stacking faults (BPSFs). The directionally dependent carrier transport was observed with the lower sheet resistances (R_sh) along the [1 1 ̄ 00] direction. The R_sh ratios of semipolar (11 2 ̄ 2) GaN films were found to be relatively smaller than those of nonpolar a-plane GaN films, possibly due to low BPSF density and the reduced in-plane electric field induced by BPSF along the [11 2 ̄ 3] direction at wurtzite domain boundaries.

Original language	English
Article number	162103
Journal	Applied Physics Letters
Volume	103
Issue number	16
DOIs	https://doi.org/10.1063/1.4825171
Publication status	Published - 2013 Oct 14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4825171

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title = "Investigation of carrier transport properties in semipolar (11 2{\= } 2) GaN films with low defect density",

abstract = "We report on the anisotropic carrier transport properties of semipolar (11 2{\= } 2) GaN films with low defect density. We utilized the asymmetric lateral epitaxy to obtain various semipolar (11 2{\= } 2) GaN films having significantly reduced partial dislocations and basal-plane stacking faults (BPSFs). The directionally dependent carrier transport was observed with the lower sheet resistances (Rsh) along the [1 1{\= } 00] direction. The Rsh ratios of semipolar (11 2{\= } 2) GaN films were found to be relatively smaller than those of nonpolar a-plane GaN films, possibly due to low BPSF density and the reduced in-plane electric field induced by BPSF along the [11 2{\= } 3] direction at wurtzite domain boundaries.",

author = "Soohwan Jang and Hyonwoong Kim and {Soo Kim}, Doo and Hwang, {Sung Min} and Jihyun Kim and {Hyeon Baik}, Kwang",

note = "Funding Information: The authors would like to thank Dr. Y. G. Seo at the Korea Electronics Technology Institute for X-ray diffraction measurements and helpful discussions. This work was supported by 2013 Hongik University Research Fund.",

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doi = "10.1063/1.4825171",

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T1 - Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density

AU - Jang, Soohwan

AU - Kim, Hyonwoong

AU - Soo Kim, Doo

AU - Hwang, Sung Min

AU - Kim, Jihyun

AU - Hyeon Baik, Kwang

N1 - Funding Information: The authors would like to thank Dr. Y. G. Seo at the Korea Electronics Technology Institute for X-ray diffraction measurements and helpful discussions. This work was supported by 2013 Hongik University Research Fund.

PY - 2013/10/14

Y1 - 2013/10/14

N2 - We report on the anisotropic carrier transport properties of semipolar (11 2 ̄ 2) GaN films with low defect density. We utilized the asymmetric lateral epitaxy to obtain various semipolar (11 2 ̄ 2) GaN films having significantly reduced partial dislocations and basal-plane stacking faults (BPSFs). The directionally dependent carrier transport was observed with the lower sheet resistances (Rsh) along the [1 1 ̄ 00] direction. The Rsh ratios of semipolar (11 2 ̄ 2) GaN films were found to be relatively smaller than those of nonpolar a-plane GaN films, possibly due to low BPSF density and the reduced in-plane electric field induced by BPSF along the [11 2 ̄ 3] direction at wurtzite domain boundaries.

AB - We report on the anisotropic carrier transport properties of semipolar (11 2 ̄ 2) GaN films with low defect density. We utilized the asymmetric lateral epitaxy to obtain various semipolar (11 2 ̄ 2) GaN films having significantly reduced partial dislocations and basal-plane stacking faults (BPSFs). The directionally dependent carrier transport was observed with the lower sheet resistances (Rsh) along the [1 1 ̄ 00] direction. The Rsh ratios of semipolar (11 2 ̄ 2) GaN films were found to be relatively smaller than those of nonpolar a-plane GaN films, possibly due to low BPSF density and the reduced in-plane electric field induced by BPSF along the [11 2 ̄ 3] direction at wurtzite domain boundaries.

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DO - 10.1063/1.4825171

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 162103

ER -

Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density

Abstract

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