Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density

Soohwan Jang, Hyonwoong Kim, Doo Soo Kim, Sung Min Hwang, Ji Hyun Kim, Kwang Hyeon Baik

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report on the anisotropic carrier transport properties of semipolar (11 2 ̄ 2) GaN films with low defect density. We utilized the asymmetric lateral epitaxy to obtain various semipolar (11 2 ̄ 2) GaN films having significantly reduced partial dislocations and basal-plane stacking faults (BPSFs). The directionally dependent carrier transport was observed with the lower sheet resistances (Rsh) along the [1 1 ̄ 00] direction. The Rsh ratios of semipolar (11 2 ̄ 2) GaN films were found to be relatively smaller than those of nonpolar a-plane GaN films, possibly due to low BPSF density and the reduced in-plane electric field induced by BPSF along the [11 2 ̄ 3] direction at wurtzite domain boundaries.

Original languageEnglish
Article number162103
JournalApplied Physics Letters
Volume103
Issue number16
DOIs
Publication statusPublished - 2013 Oct 14

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transport properties
crystal defects
defects
wurtzite
epitaxy
electric fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density. / Jang, Soohwan; Kim, Hyonwoong; Soo Kim, Doo; Hwang, Sung Min; Kim, Ji Hyun; Hyeon Baik, Kwang.

In: Applied Physics Letters, Vol. 103, No. 16, 162103, 14.10.2013.

Research output: Contribution to journalArticle

Jang, Soohwan ; Kim, Hyonwoong ; Soo Kim, Doo ; Hwang, Sung Min ; Kim, Ji Hyun ; Hyeon Baik, Kwang. / Investigation of carrier transport properties in semipolar (11 2 ̄ 2) GaN films with low defect density. In: Applied Physics Letters. 2013 ; Vol. 103, No. 16.
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