Abstract
The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360{ring operator}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E[over(1, ̄) 10] / M = 27.5 ± 0.3 Oe and Δ E[over(1, ̄) over(1, ̄) 0] / M = 38.0 ± 0.7 Oe were obtained for the Ga0.94Mn0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.
| Original language | English |
|---|---|
| Pages (from-to) | 27-29 |
| Number of pages | 3 |
| Journal | Solid State Communications |
| Volume | 150 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2010 Jan 1 |
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Keywords
- A. Ferromagnetism
- A. Semiconductor
- D. Anisotropy
- E. Planar Hall effect
ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Chemistry
Cite this
Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect. / Kim, Jungtaek; Lee, Sangyeop; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.
In: Solid State Communications, Vol. 150, No. 1-2, 01.01.2010, p. 27-29.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Investigation of domain pinning fields in ferromagnetic GaMnAs films using angular dependence of the planar Hall effect
AU - Kim, Jungtaek
AU - Lee, Sangyeop
AU - Lee, Sang Hoon
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2010/1/1
Y1 - 2010/1/1
N2 - The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360{ring operator}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E[over(1, ̄) 10] / M = 27.5 ± 0.3 Oe and Δ E[over(1, ̄) over(1, ̄) 0] / M = 38.0 ± 0.7 Oe were obtained for the Ga0.94Mn0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.
AB - The dependence of the planar Hall effect (PHE) in ferromagnetic GaMnAs films on the direction of the applied magnetic field was used to determine domain pinning fields in this material. The investigation was carried out by measuring the effect of reorientation of magnetization from one easy axis to another on the value of PHE as the magnetic field of fixed strength was rotated over 360{ring operator}. This process was repeated at several field strengths, and the PHE results were analyzed using Cowburn's model of magnetic free energy, from which domain pinning fields of Δ E[over(1, ̄) 10] / M = 27.5 ± 0.3 Oe and Δ E[over(1, ̄) over(1, ̄) 0] / M = 38.0 ± 0.7 Oe were obtained for the Ga0.94Mn0.06As film used in this study. These values of pinning fields agree with those obtained in earlier studies where the magnetization reversal was investigated by sweeping the magnetic field. We show that the present approach of rotating a fixed field provides a simpler and more elegant way for studying domain pinning fields in a ferromagnetic film.
KW - A. Ferromagnetism
KW - A. Semiconductor
KW - D. Anisotropy
KW - E. Planar Hall effect
UR - http://www.scopus.com/inward/record.url?scp=70449084789&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70449084789&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2009.10.014
DO - 10.1016/j.ssc.2009.10.014
M3 - Article
VL - 150
SP - 27
EP - 29
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 1-2
ER -