Abstract
Schottky barrier height (SBH; ΦB) and their dependence on the work function of metals (ΦM) at semipolar (11-22) p-GaN surfaces were investigated using Schottky diodes fabricated with different metals. The SBH increased with temperature, whereas the ideality factor decreased. This behavior was explained by means of the barrier inhomogeneity model, giving the mean barrier heights of 1.93-2.05 eV for different metals. The S-parameter (dΦB/dΦM) was obtained to be 0.04. This small S-parameter implies that the surface Fermi level is nearly perfectly pinned at deep-level states (caused by vacancy-related and/or Mg-induced defects) located at 1.98 eV above the valence band. This finding indicates that the surface modification is essentially required for the formation of high-quality ohmic and/or Schottky contacts.
| Original language | English |
|---|---|
| Pages (from-to) | 76-81 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 77 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Materials Science(all)
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Investigation of Fermi level pinning at semipolar (11-22) p-type GaN surfaces. / Choi, Young Yun; Kim, Seongjun; Oh, Munsik; Kim, Hyunsoo; Seong, Tae Yeon.
In: Superlattices and Microstructures, Vol. 77, 01.01.2015, p. 76-81.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of Fermi level pinning at semipolar (11-22) p-type GaN surfaces
AU - Choi, Young Yun
AU - Kim, Seongjun
AU - Oh, Munsik
AU - Kim, Hyunsoo
AU - Seong, Tae Yeon
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Schottky barrier height (SBH; ΦB) and their dependence on the work function of metals (ΦM) at semipolar (11-22) p-GaN surfaces were investigated using Schottky diodes fabricated with different metals. The SBH increased with temperature, whereas the ideality factor decreased. This behavior was explained by means of the barrier inhomogeneity model, giving the mean barrier heights of 1.93-2.05 eV for different metals. The S-parameter (dΦB/dΦM) was obtained to be 0.04. This small S-parameter implies that the surface Fermi level is nearly perfectly pinned at deep-level states (caused by vacancy-related and/or Mg-induced defects) located at 1.98 eV above the valence band. This finding indicates that the surface modification is essentially required for the formation of high-quality ohmic and/or Schottky contacts.
AB - Schottky barrier height (SBH; ΦB) and their dependence on the work function of metals (ΦM) at semipolar (11-22) p-GaN surfaces were investigated using Schottky diodes fabricated with different metals. The SBH increased with temperature, whereas the ideality factor decreased. This behavior was explained by means of the barrier inhomogeneity model, giving the mean barrier heights of 1.93-2.05 eV for different metals. The S-parameter (dΦB/dΦM) was obtained to be 0.04. This small S-parameter implies that the surface Fermi level is nearly perfectly pinned at deep-level states (caused by vacancy-related and/or Mg-induced defects) located at 1.98 eV above the valence band. This finding indicates that the surface modification is essentially required for the formation of high-quality ohmic and/or Schottky contacts.
KW - Barrier inhomogeneity model
KW - Schottky contacts
KW - Semipolar GaN
KW - Surface states
UR - http://www.scopus.com/inward/record.url?scp=84912122762&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912122762&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2014.10.031
DO - 10.1016/j.spmi.2014.10.031
M3 - Article
AN - SCOPUS:84912122762
VL - 77
SP - 76
EP - 81
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
ER -